Stmicroelectronics Gmbh

Stmicroelectronics(tours) Sas

Ditto Adnan

Voon Cheng Ngwan

Fadhillawati Tahir

Maurizio Gabriele Castorina

Olivier Le Neel

Tien-Choy Loh

Shian-Yeu Kam

Yean Ching Yong

Shin Phay Lee

Gino George

KeenYip Koh

CheeChiang Lee

Tze Wei Dennis Chew

Churn Weng Yim

A trench in a semiconductor substrate is lined with a first insulation layer. A hard mask layer deposited on the first insulation layer is used to control performance of an etch that selectively removes a first portion of the first insulating layer from an upper trench portion while leaving a second portion of first insulating layer in a lower trench portion. After removing the hard mask layer, an upper portion of the trench is lined with a second insulation layer. An opening in the trench that includes a lower open portion delimited by the second portion of first insulating layer in the lower trench portion and an upper open portion delimited by the second insulation layer at the upper trench portion, is then filled by a single deposition of polysilicon material forming a unitary gate/field plate conductor of a field effect rectifier diode.

Method of making a charge coupled field effect rectifier diode

An integrated circuit transistor device includes a semiconductor substrate providing a drain, a first doped region buried in the semiconductor substrate providing a body and a second doped region in the semiconductor substrate providing a source. A trench extends into the semiconductor substrate and passes through the first and second doped regions. An insulated polygate region within the trench surrounds a polyoxide region that may have void inclusion. The polygate region is formed by a first gate lobe and second gate lobe on opposite sides of the polyoxide region. A pair of gate contacts are provided at each trench. The pair of gate contacts includes: a first gate contact extending into the first gate lobe at a location laterally offset from the void and a second gate contact extending into the second gate lobe at a location laterally offset from the void.

Gate contact structure for a trench power MOSFET with a split gate configuration

A semiconductor substrate has a trench extending from a front surface and including a lower part and an upper part. A first insulation layer lines the lower part of the trench, and a first conductive material in the lower part is insulated from the semiconductor substrate by the first insulating layer to form a field plate electrode of a transistor. A second insulating layer lines sidewalls of the upper part of said trench. A third insulating layer lines a top surface of the first conductive material at a bottom of the upper part of the trench. A second conductive material fills the upper part of the trench. The second conductive material forms a gate electrode of the transistor that is insulated from the semiconductor substrate by the second insulating layer and further insulated from the first conductive material by the third insulating layer.

Split-gate trench power MOSFET with self-aligned poly-to-poly isolation

A photoresist delivery system includes a photoresist pump, a photoresist reservoir coupled to the photoresist pump, and a photoresist container. A control valve is between the photoresist reservoir and the photoresist container and is movable from a closed position to an open position upon engagement of the photoresist container with the photoresist reservoir to replenish photoresist therein.

Photoresist delivery system including control valve and associated methods

A micro-sensor device that includes a passivation-protected ASIC module and a micro-sensor module bonded to a patterned cap provides protection for signal conditioning circuitry while allowing one or more sensing elements in the micro-sensor module to be exposed to an ambient environment. According to a method of fabricating the micro-sensor device, the patterned cap can be bonded to the micro-sensor module using a planarizing adhesive that is chemically compatible with the sensing elements. In one embodiment, the adhesive material is the same material used for the dielectric active elements, for example, a photo-sensitive polyimide film.

Adhesive bonding technique for use with capacitive micro-sensors

Growing community of inventors

Singapore, Singapore

Ditto Adnan