Arm Limited

Avago Technologies General IP (singapore) Pte. Ltd.

Disha Singh

Rajiv Kumar Sisodia

Srinivasan Srinath

Gautam Garg

Georgy Jacob

Rajiv Kumar Roy

Dharmendra Kumar Rai

Sahilpreet Singh

Yattapu Viswanatha Reddy

Kedhar Malla

Various implementations described herein are directed to a device having a first read wordline formed in a first metal layer and a read wordline driver having an output node coupled to one or more memory cells via the first read wordline formed in the first metal layer. The device may include a second read wordline formed in a second metal layer that is different than the first metal layer, and the read wordline driver may have an input node coupled to the second read wordline formed in the second metal layer.

Wordline coupling techniques

Various implementations described herein are related to a device having an array of bitcells that are accessible via wordlines and bitlines including unselected bitlines and a selected bitline. Each bitcell in the array of bitcells may be selectable via a selected wordline of the wordlines and the selected bitline of the bitlines. The device may include precharge circuitry that is configured to selectively precharge the unselected bitlines and the selected bitline before arrival of a wordline signal on the selected wordline.

Bitline precharging techniques

Various implementations described herein are related to a device having a sense amplifier with multiple output ports. The device may include tri-state buffer circuitry having multiple tri-state buffers coupled to the multiple output ports of the sense amplifier. The device may include latch circuitry having multiple latches coupled to the multiple tri-state buffers of the tri-state buffer circuitry.

Tri-state buffering techniques

Level shifters are disclosed for high performance sub-micron IC designs. One embodiment is a level shifting device that comprises a first input circuit that toggles a first internal signal between a logical zero of a first voltage range and a logical one of a second voltage range based on an input data signal and an output data signal, and a second input circuit that toggles a second internal signal between a logical zero of the second voltage range and a logical one of the first voltage range based on the input data signal and the output data signal. An output circuit of the device toggles the output data signal between a logical zero of the second voltage range and a logical one of the second voltage range based on the first internal signal, the second internal signal, and a compliment of the input data signal.

Systems and methods for voltage level shifting in a device

A Read Only Memory (ROM) and method for providing a high operational speed with reduced leakage, no core cell standby leakage, and low power consumption. The source of the ROM cell (NMOS) is connected to a virtual ground line (VNGD) instead of VSS. Thus, the ROM cell can be operatively coupled to the bit-line, the word-line, and the virtual ground, which also acts as a column select signal. The arrangement of the ROM is such that the virtual ground of the selected column is pulled down to a ground voltage. Non-selected columns virtual ground can be maintained at a supply voltage to ensure that unwanted columns will not have any sub-threshold current (as Vds=0). Since no pre-charging of bit-line comes in the access time path, the ROM achieves a high operational speed with reduced leakage and low power consumption.

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Bengaluru, India

Disha Singh