Siltronic Ag

Other

Dirk Zemke

Reinhold Wahlich

Alfred Miller

Markus Blietz

Wilfried Von Ammon

Christoph Frey

Dieter Graef

Herbert Weidner

Dieter Gräf

An SOI wafer is constructed from a carrier wafer and a monocrystalline silicon layer having a thickness of less than 500 nm, an excess of interstitial silicon atoms prevailing in the entire volume of the silicon layer. The SOI wafers may be prepared by Czochralski silicon single crystal growth, the condition v/G&#x3c;(v/G)=1.3&#xd7;10cm/(K&#xb7;min) being fulfilled at the crystallization front over the entire crystal cross section, with the result that an excess of interstitial silicon atoms prevails in the silicon single crystal produced; separation of at least one donor wafer from this silicon single crystal, bonding of the donor wafer to a carrier wafer, and reduction of the thickness of the donor wafer, with the result that a silicon layer having a thickness of less than 500 nm bonded to the carrier wafer remains.

SOI wafer and method for producing it

A process for producing nitrogen-doped semiconductor wafers has the nitrogen being derived from a dopant gas which contains NH . The process includes pulling a single crystal from a melt of molten semiconductor material, feeding the dopant gas to the semiconductor material, and cutting the nitrogen-doped semiconductor wafers off the pulled single crystal. The dopant gas is fed to the semiconductor material at most until pulling begins for that part of the single crystal from which the semiconductor wafers are cut.

Process for producing nitrogen-doped semiconductor wafers

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Marktl, Germany

Dirk Zemke