Other

Dirk Tobben

Jeffrey P Gambino

Jack Allan Mandelman

Rajarao Jammy

Byeong Yeol Kim

Rama Divakaruni

Akira Sudo

A memory structure having a trenched formed in a substrate. A collar oxide is located in an upper portion of the trench and includes a pedestal portion. A method of forming a memory device having a collar oxide with pedestal collar is also disclosed.

Pedestal collar structure for higher charge retention time in trench-type DRAM cells

A method for connecting metal structures with self-aligned metal caps, in accordance with the invention, includes providing a metal structure in a first dielectric layer. The metal structure and the first dielectric layer share a substantially planar surface. A cap metal is selectively depositing on the metal structure such that the cap metal is deposited only on the metal structure. A second dielectric layer is formed over the cap metal. The second dielectric layer is opened to form a via terminating in the cap metal. A conductive material is deposited in the via to provide a contact to the metal structure through the cap metal.

Self-aligned metal caps for interlevel metal connections

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Dresden, Germany

Dirk Tobben