Globalfoundries Inc.

Globalfoundries U.S. Inc.

Dirk Noack

Wieland Pethe

Bernd Kallauch

The embodiments herein relate to methods for processing a wafer through a semiconductor wafer processing system and an apparatus. According to an aspect of the present disclosure, a system for processing a semiconductor wafer is provided. The system includes a heating system, a pressure control system, and a gas flow system. The heating system is configured for heating a chuck. The pressure control system is configured for setting an internal chamber pressure. The gas flow system is configured for inflowing a gas in the process chamber to increase the internal chamber pressure to at least a base pressure. The heating system heats the chuck after the internal chamber pressure reaches the base pressure set by the pressure control system.

Semiconductor wafer processing system

One illustrative system disclosed herein includes a process chamber positioned within a processing tool and a wafer chuck that is adapted to be positioned at a wafer processing position located within the process chamber and at a chuck wafer transfer position located outside of the process chamber.

System comprising a single wafer, reduced volume process chamber

A method of treating a semiconductor device is provided including the steps of loading the semiconductor device in a processing chamber, pressurizing the processing chamber by supplying a processing gas from a pressure chamber to the processing chamber, performing a thermal anneal of the semiconductor device in the processing chamber, and depressurizing the processing chamber by supplying the processing gas from the processing chamber to the pressure chamber.

Growing community of inventors

Ottendorf-Okrilla, Germany

Dirk Noack