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Dirk N Weiss

Thomas D Radcliff

Rhonda R Willigan

A thermoelectric device () includes a plurality of alternating p-type and n-type semiconductor thermoelectric elements () the elements (-) being separated by electrically and thermally conductive interconnects (-), alternating interconnects (-) extending in an opposite direction from interconnects (-) interspersed therewith. Each thin-film element comprises several hundred thermoelectric alloy A superlattice thin-films interspersed with several hundred thermoelectric alloy B superlattice thin-films, the thin-film elements being between 5 and 25 microns thick and preferably over 10 microns thick. The thin-film elements may be interspersed with opposite type thin-film elements or with opposite type bulk elements (). The interconnects are preferably joined to the elements by diffusion bonding.

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Kenmore, WA, United States of America

Dirk N Weiss