Infineon Technologies Ag

Infineon Technologies Dresden Gmbh

Infineon Technologies Dresden Gmbh & Co . Kg

Dirk Meinhold

Thoralf Kautzsch

Steffen Bieselt

Dirk Offenberg

Ines Uhlig

Klemens Pruegl

Hermann Gruber

Uwe Hoeckele

Wolfgang Dickenscheid

Emanuele Bruno Bodini

Felix Braun

Ben Rosam

Bernhard Winkler

Henning Feick

Heinrich Koerner

Boris Binder

Hanno Melzner

Stefano Parascandola

Thomas Bever

Norbert Urbansky

Bernd Foeste

Alfred Vater

Andreas Thamm

Georg Seidemann

Stefan Kolb

Thorsten Scharf

Erhard Landgraf

Frank Daeche

Christian Bretthauer

Sven Schmidbauer

Lothar Brencher

Markus Fischer

Gerald Dallmann

Michael Hartenberger

Horst Theuss

Alfons Dehe

Klaus Elian

Hans-Joerg Timme

Reimund Engl

Wolfram Langheinrich

Dieter Kaiser

Florian Brandl

Robert Gruenberger

Roland Meier

Momtchil Stavrev

Sebastian Pregl

Norbert Mais

Ludwig Dittmar

Daniel Koehler

Sebastian Luber

Stephan Henneck

Georg Holfeld

Wolfgang Dickenscheld

Marco Müller

Claudia Hengst

A semiconductor component includes: a silicon-based substrate; an oxide layer atop the silicon-based substrate; an electronic component based on polycrystalline silicon; a crystalline silicon layer atop the silicon-based substrate and atop lateral faces of the oxide layer; and a lid connected to the crystalline silicon layer. The lid is a glass-based lid, a quartz-based lid or a silicon-based lid.

Semiconductor component including an electronic component based on polycrystalline silicon

A semiconductor die is proposed, wherein the semiconductor die comprises a microelectronic section and a sensor section. The microelectronic section comprises an integrated circuit. The sensor section adjoins an edge of the semiconductor die. A sensor is also proposed, which comprises such a semiconductor die.

Semiconductor die with sensor section located at the edge

In some implementations a semiconductor die comprises a semiconductor chip. The semiconductor chip comprises a piezoresistive pressure sensor element and at least one capacitive acceleration sensor element. The piezoresistive pressure sensor element is arranged to the side of the capacitive acceleration sensor element. In some implementations, a method for producing a semiconductor die includes applying an insulation layer to the semiconductor wafer. A section of the monocrystalline cover layer may be exposed by structuring the insulation layer. A semiconductor layer having a monocrystalline section and a polycrystalline section may be generated by deposition of a semiconductor material.

Semiconductor die with pressure and acceleration sensor elements

A sensor system with a first semiconductor die part and with a second semiconductor die part is proposed, wherein the first semiconductor die part has a microelectromechanical sensor element, wherein the second semiconductor die part covers the microelectromechanical sensor element, wherein the second semiconductor die part has a via for electrically contacting the microelectromechanical sensor element, in particular directly. A method for producing a sensor system is also proposed.

Sensor system with a microelectromechanical sensor element and method for producing a sensor system

A method of producing a semiconductor component includes: providing a silicon-based substrate; depositing an oxide layer on the silicon-based substrate; depositing a polycrystalline silicon layer on the oxide layer and simultaneously a crystalline silicon layer on the silicon-based substrate; producing an electronic component based on the polycrystalline silicon layer; and mounting a glass- or silicon-based lid on the crystalline silicon layer.

Method of producing a semiconductor component and semiconductor component

A micro-electro-mechanical sensor comprises a first substrate comprising an element movable with respect to the first substrate and a second substrate comprising a first contact pad and a second contact pad. The first substrate is bonded to the second substrate such that a movement of the element changes a coupling between the first contact pad and the second contact pad.

Micro-mechanical sensor and method for manufacturing a micro-electro-mechanical sensor

Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

Method of manufacturing an imager and imager device

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; at least one stress-decoupling trench that extends from the first surface into the substrate, where the at least one stress-decoupling trench extends partially into the substrate towards the second surface although not completely to the second surface; a microelectromechanical systems (MEMS) element, including a sensitive area, disposed at the first surface of the substrate and laterally spaced from the at least one stress-decoupling trench; and a stress-decoupling material that fills the at least one stress-decoupling trench and covers the sensitive area of the MEMS element.

Mechanical stress decoupling for microelectromechanical systems (MEMS) elements with gel-filling

A semiconductor element includes a processed substrate arrangement including a processed semiconductor substrate and a metallization layer arrangement on a main surface of the processed semiconductor substrate. The semiconductor element further includes a passivation layer arranged at an outer border of the processed substrate arrangement.

Semiconductor element and methods for manufacturing the same

Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.

Controlling of photo-generated charge carriers

Various acceleration sensors are disclosed. In some cases, an inertial mass may be formed during back-end-of-line (BEOL). In other cases, a membrane may have a bent, undulated or winded shape. In yet other embodiments, an inertial mass may span two or more pressure sensing structures.

Method for manufacturing an acceleration sensor

Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor chip having a first side and an opposite second side, and a chip contact pad disposed on the first side of the semiconductor chip. A dielectric liner is disposed over the semiconductor chip. The dielectric liner includes a plurality of openings over the chip contact pad. A interconnect contacts the semiconductor chip through the plurality of openings at the chip contact pad.

Semiconductor packages and methods of fabrication thereof

According to various embodiments, an electrode may include at least one layer including a chemical compound including aluminum and titanium.

Electrode, an electronic device, and a method for manufacturing an optoelectronic device

Growing community of inventors

Dresden, Germany

Dirk Meinhold