Siemens Aktiengesellschaft

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Dirk Malipaard

Alexander Hofmann

Andreas Zenkner

Manuel Blum

Markus Billmann

Christoph Blösch

Benjamin Ruccius

Marek Galek

Christoph Bloesch

Martin März

A current converter circuit in a modular multilevel topology includes an AC voltage terminal with a first phase terminal and a further voltage terminal with a plus and a minus terminal. The current converter circuit includes two arms, wherein the first arm connects the first phase terminal and the first terminal and the second arm the second phase terminal and the minus terminal. Each arm includes at least two submodules connected in series, wherein one of the at least two submodules is implemented as analog cell including a passive device as well as an electric circuit. The passive device is connected in parallel to the electric circuit and connected in series with respect to the other one of the at least two submodules.

Current converter circuit

Some embodiments may include a multi-stage converter comprising: a branch connected between a positive busbar and a negative busbar; and a control device. The branch has two arms connected in series. The arms each comprise a series circuit including a plurality of two-pole submodules, an energy store, and a communication connection to the control device. The communication connection transmits state of charge of the energy store and a switching instruction for the respective submodule. For at least a subset of the submodules, the communication connection comprises a common communication connection with a plurality of insulation paths having an insulation capability in each case of at most 5 kV.

Modular multi-stage converter

A power semiconductor module includes at least two interconnected power semiconductor units having actuatable power semiconductors, a module housing in which the power semiconductor units are disposed and which has an electrically insulating side wall, and at least one connection bus extended through the side wall and connected to at least one of the power semiconductor units. High explosion resistance and particularly inexpensive production are provided by forming the insulating side wall as a stack of insulating and partial elements constructed as a single piece, in which contact areas of the partial elements contact each other.

Power semiconductor module having layered insulating side walls

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Nürnberg, Germany

Dirk Malipaard