Koninklijke Philips Corporation N.v.

Other

Dirk Maarten Knotter

Johannes Van Wingerden

Madelon Gertruda Josephina Rovers

Steve Nelson

Paul Mertens

Marc A Meuris

Marc Marcel Heyns

Robert James Pascoe Lander

Stefan DeGendt

Georg Gogg

Charlene Reaux

Antonius A M Van De Vorst

Leonardus Cornelus Robertus Winters

Servatius Maria Vleeshouwers

Peter Van Der Velden

Consistent with an example embodiment according to the invention, a material for the intermediate layer is chosen which can be selectively etched with respect to the dielectric layer. Before the deposition of the first conductor layer, the intermediate layer is removed at the location of the first channel region, and after the deposition of the first conductor layer and the removal thereof outside the first channel region and before the deposition of the second conductor layer, the intermediate layer is removed at the location of the second channel region. Thus, field effect transistors (FETs) are obtained in a simple manner and without damage to their gate dielectric. Preferably, a further intermediate layer is deposited on the intermediate layer which can be selectively etched with respect thereto.

Method of manufacturing a semiconductor device and semiconductor device obtained by means of such a method

The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate with a layer of silicon thereon, an inorganic anti-reflective layer applied to the layer of silicon, and a resist mask applied to the inorganic anti-reflective layer, which method comprises the steps of:

Method of wet etching an inorganic antireflection layer

The invention relates to a method of manufacturing a semiconductor device comprising the step of removing a silicon and nitrogen containing material by means of wet etching with an aqueous solution comprising hydrofluoric acid in a low concentration, the aqueous solution being applied under elevated pressure to reach a temperature above 100&#xb0; C.

Method of wet etching a silicon and nitrogen containing material

Method of manufacturing a semiconductor device

A method of manufacturing an electronic device, in particular but not exclusively a semiconductor device, in which method a substrate ( ) is placed inside a process chamber ( ) and a surface ( ) of the substrate ( ) is subjected to an ozone treatment comprising the steps of: providing a liquid onto the surface ( ) of the substrate ( ) via first supply means, introducing a solution comprising a liquid carrier solvent and ozone gas into the process chamber ( ) via second supply means, without bringing about direct contact between the solution and the surface ( ) of the substrate ( ).

Method of manufacturing a semiconductor device and apparatus to be used therefore

A method of reducing the thickness t of a layer of material on a substrate when the substrate is exposed to an etchant for a span of time sufficient to reduce t to a value t , at which point exposure to the etchant is interrupted, includes the thickness to being determined using monitoring means which, at any given instant, allow determination of the depth &Dgr;t of material which has been etched away. The method further includes the monitoring means being embodied as a resonant crystal whose resonant frequency f at any given instant is a function of the mass m of the crystal at that instant. The crystal is coated with a layer of reference material of thickness d, which material can be etched using the same etchant as for the material on the substrate. The crystal is exposed to the etchant simultaneously with the substrate, thus causing m to decrease as reference material is etched away, a decrease Am in m corresponding to a decrease &Dgr;d in d, in turn corresponding to a decrease &Dgr;t in t. The resonant frequency f is monitored so as to identify the increase &Dgr;f in f corresponding to a decrease &Dgr;m in m, in turn corresponding to a decrease &Dgr;t in t, and exposure of both the substrate and the crystal to the etchant is interrupted upon attainment of a frequency f &equals;f&plus;&Dgr;f corresponding to the desired value t &equals;t&minus;&Dgr;t.

Etching method

A method for removing organic contaminants from a semiconductor surface whereby the semiconductor is held in a tank and the tank is filled with a fluid such as a liquid or a gas. Organic contaminants, such as photoresist, photoresidue, and dry etched residue, occur in process steps of semiconductor fabrication and at times, require removal. The organic contaminants are removed from the semiconductor surface by holding the semiconductor inside a tank. The method is practiced using gas phase processing. The tank is filled with a gas mixture, comprising water vapor and ozone.

Method for removing organic contaminants from a semiconductor surface

Method of manufacturing electronic devices and apparatus for carrying out such a method

Arrangement and method for detecting the end of life of an aqueous bath utilized in semiconductor processing, the bath containing water, an amount of hydrogen peroxide and an amount of a predetermined chemical species, which is either an acid or a base, in accordance with the following steps: adding a predetermined additional amount of the hydrogen peroxide and/or the predetermined chemical species at predetermined time intervals, measuring at least one parameter of the aqueous bath, thereby obtaining a measured parameter value, the at least one parameter being selected from a set of parameters including bath pH and bath conductivity; reading a predicted value of said at least one parameter from a memory storing a curve of predicted values of said at least one parameter as a function of time, said curve depending on said predetermined additional amount of said hydrogen peroxide and/or said predetermined chemical species, and depending on said predetermined time intervals; establishing the end of life of said aqueous bath on the basis of a predetermined deviation between said measured parameter value and said predicted value.

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Nijmegen, Netherlands

Dirk Maarten Knotter