Jenoptik Aktiengesellschaft

Jenoptik Laserdiode Gmbh

Jenoptik Laser Gmbh

Toll Collect Gmbh

Dirk Lorenzen

Petra Hennig

Matthias Schroeder

Ulrich Roellig

Guido Bonati

Friedhelm Dorsch

Franz Daiminger

Hartmut G Haensel

Stefan Heinemann

Matthias Schröder

Ulrich Rollig

Rainer Dohle

Ulrich Röllig

A semiconductor component on mutually opposing sides is joined in a first and a second bonded connection with a heat conducting body each. The heat-conducting bodies are joined in a third bonded connection in the region of the sections thereof extending away from the semiconductor element. A spacer, which with regard to the third connection, is disposed on the opposite side of the semiconductor component between the heat-conducting bodies, in conjunction with the joining zone thickness of the third connection being greater than that of the first or the second joining zone to ensure that defined joining zone thicknesses in the bonded connection is maintained during the joining process. The third connection can be used for at least partial heat transfer of the waste heat of the semiconductor component, particularly to a heat sink that is connected to the heat transfer device.

Heat transfer device with at least one semiconductor element, particularly a laser or light-emitting diode element, and method for the assembly thereof

A laser radiation source which is scalable with respect to output is designed in such a way that laser diode elements can be arranged on a carrier so as to be stacked equidistantly and with low stress at a low manufacturing cost. The laser radiation source comprises a vertical stack of laser diode elements contacted on both sides via electrically conductive substrate layers, and at least one multi-layer carrier comprising a first and a second metallic layer which are separated by at least one electrically insulating layer of nonmetallic material. At least one of the metallic layers is divided into metallic layer regions which are arranged adjacent to one another and at a distance from one another. Oppositely polarized substrate layers of adjacent laser diode elements are arranged on common layer regions of a metallic layer. Collimating lenses serve to collimate the radiation emitted by the laser diode elements.

Carrier for a vertical arrangement of laser diodes with a stop

In a diode laser module and a method for the production thereof, there is a need to fix the optical elements required for collimating, beam shaping and/or beam rearrangement of the radiation of a laser diode element with high reproducibility and long-term stability in an optically aligned manner, wherein the optically aligned state is produced by a successive adjustment of the optical elements in the beam of the switched-on laser diode element. It must be ensured that the fixing can be carried out in a process that is at least partially automated. At least one intermediate carrier is arranged on a heat-dissipating carrier serving to cool the laser diode element. The heat conductivity of the intermediate carrier is less than that of the heat-dissipating carrier, and the alignment of the optical components and fixation by sequential soldering is carried out on the surface of the intermediate carrier.

Diode laser module and method for the production thereof

Expansion-adapted mounting and electrical contacting of laser diode elements are connected with one another in terms of structural engineering such that the laser diode elements can be stacked or arranged laterally in one plane for producing vertical diode laser arrangements with low production complexity. The upper and the lower layers of a heat-distributing multilayer substrate for a diode laser subelement, between which a separating layer is disposed, contain metal strata regions arranged spaced from one another of which for forming strata region pairs each strata region of the upper layer is joined electrically conducting to a strata region of the lower layer. The separating layer contains at least one electrically insulating stratum made of non-metallic material and the sum of the thicknesses of metallic strata in the multilayer substrate exceeds the sum of the thicknesses of non-metallic strata at least in a partial region perpendicular to the mounting surface for at least one laser diode element.

Diode laser subelement and arrangements with such diode laser subelement

The invention refers to a novel semiconductor module with at least one semiconductor element in the form of a laser diode or laser diode arrangement, whereby the semiconductor element is provided with an area of a multi-layer substrate, which at least in a partial area is designed as a micro-cooler through which cooling medium flows, and which has connectors for supplying and discharging cooling medium.

Semiconductor module

A diode laser component is disclosed for providing a passive cooling heatsink with improved heat spreading such that a diode laser component which uses a heatsink of this type is constructed so as to be thermally symmetrical and compact and can be used for multiple purposes, particularly as regards beam control and electrical circuitry. The heatsink, which carries a diode laser bar on a mounting surface, contains an area for heat spreading which is enclosed by material and surrounds all edges of the mounting surface. Recesses for fastening of elements are arranged in the heatsink outside of the area for heat spreading.

Diode laser component

A method is disclosed for joining an electrical contact of minor thermal function to a high-power diode laser bar, comprises the step of joining the contact and the HDB by a joining material containing an adhesive. A high-power diode laser bar-contact arrangement comprises a high-power diode laser bar, an electrical contact of minor thermal function and a joint zone between the HDB and the contact. The joint zone contains a joining material with an adhesive. The disclosure also describes a high-power diode laser comprising an HDB, two electrical contacts of minor thermal function and two joint zones between the contacts and the HDB. The joint zones contain joining materials with adhesives. A high-power diode laser stack is also described.

Method for contacting a high-power diode laser bar and a high-power diode laser bar-contact arrangement of electrical contacts with minor thermal function

Mounting substrate and heat sink for high-power diode laser bars, the mounting substrate permitting mounting of the high-power diode laser bars by hard-soldering on the basis of a matching expansion to the semiconductor material. The mounting substrate is difficult to bend and of extremely high thermal conductivity, and can be used universally for the various cooling elements of conductive and convective cooling mechanisms.

Mounting substrate and heat sink for high-power diode laser bars

In a device for cooling diode lasers, it is aimed to increase the heat transfer coefficient, with a low overall height of the device, in such a manner that the pressure losses occurring also effectively ensure that stacked heat sinks are operated in parallel in terms of flow. Channels arranged in superimposed planes are divided, in each plane, into groups which are flow-connected in series and, in order to be connected in series, open out into flow-connecting links which are common to the superimposed planes. The device is suitable as a heat sink for diode lasers, in particular for cooling diode laser arrays and stacks thereof.

Device for cooling diode lasers

A high-power diode laser and a method for mounting same are described. Predetermined breaking locations in the laser bar are provided which, during cooling after the laser bar has been soldered to a heat sink having a smaller thermal expansion coefficient, lead to breakage at defined locations between the single laser diodes of the laser bar. As a result of the physical division of the laser bar, it is possible to use a solder which has low ductility (hard solder) at room temperature, since destruction of the single laser diodes of the laser bar as a result of mechanical stresses can be ruled out.

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Jena, Germany

Dirk Lorenzen