U.S. Philips Corporation

Koninklijke Philips Corporation N.v.

Dirk J Gravesteijn

Carolus J Van Der Poel

Ronald Dekker

Henricus G Maas

Josephus M Wijn

Johannes P Van Liempd

Jan Van Der Veen

Christiaan Steenbergen

Martinus P Versleijen

Willem Frederik Adrianus Besling

Cornelis Adrianus Henricus Antonius Mutsaers

Wilhelmus P Nijssen

Cornelis Johannes Schoot

Carlus J Van Der Poel

Method of manufacturing a semiconductor device

A semiconductor device includes a semiconductor body (1) having a semiconductor element with connection points (2, 3) which adjoins a surface (4) of the semiconductor body (1) and is laterally insulated and surrounded by a first depression (5) in the surface (4), which depression (5) is provided with a wall (6) and a bottom (7), while the surface (4) of the semiconductor body (1) and the wall (6) and bottom (7) of the depression (5) are covered with an insulating layer (8). The connection points (2, 3) are provided in the insulating layer (8) on the surface (4) of the semiconductor body (1) and are connected to conductor tracks (10, 11) which connect the connection points (2, 3) across a wall (6) to connection surfaces (12, 13) associated with the connection points (2, 3) and situated on the bottom (7). It is found in practice that, in the case of progressive miniaturization, the manufacture of such devices leads to rejects caused by short-circuits between connection surfaces (12, 13). According to the invention, one or several further depressions (50) surrounded by the first depression (5) is/are present in the surface (4) of the semiconductor body (1), while only one connection surface (12, 13) is present on the bottom (7, 57) of each of the first and further depressions (5, 50), which connection surface is connected to a connection point (2, 3) on the surface (4) of the semiconductor body (1) via a conductor track (10, 11). Short-circuits are found to take place in the known semiconductor devices on a wall (6) of the depression (5) when there are more than one conductor tracks (10, 11) on this wall (6). Here, however, only one conductor track (10 or 11) is present on the wall (6, 56 of the depression (5, 50), so short-circuits with other conductor tracks on the wall (6, 56) cannot arise.

Semiconductor device with a semiconductor element provided in a mesa

A semiconductor device with a semiconductor body (1) is provided with a first and a second bipolar transistor (T1, T2, respectively) in a cascode configuration, in which the semiconductor body (1) comprises, in that order, a collector region (10) and a base region (11) of the first transistor (T1), a region (12) which forms both an emitter region of the first transistor (T1) and a collector region of the second transistor (T2), a space charge region (13), and a base region (14) and emitter region (15) of the second transistor (T2), while the regions form pn junctions with one another which extend parallel to a main surface (2) of the semiconductor body (1). The base region (14) and the emitter region (15) of the second transistor (T2) adjoin a main surface (3) of the semiconductor body (1). According to the invention, a depression (4) is provided in this main surface (3), cutting through the emitter region (12) of the first transistor (T1) which at the same time is the collector region (12) of the second transistor (T2), the space charge region (13), and the base region (14) of the second transistor (T2) and laterally bounding these; regions, while a connection electrode (B1) for the base region (11) of the first transistor (T1) is provided in the depression (4). No latch-up by a parasitic transistor then takes place in the device.

Bipolar epitaxial cascode with low-level base connection

A master disc which is provided on one side with a reflective optical structure and a recording double-layer is exposed to a first laser beam which scans the optical structure and to a second laser beam which is controlled by the first beam, information bits in the form of bulges being formed in the recording layer due to exposure to the second beam, a metal skin being subsequently provided on the recording layer, in which metal skin the surface structure of the recording layer is copied and, finally, the matrix thus obtained being removed from the master disc.

Master disc suitable for the manufacture of matrices containing a

Method of manufacturing a metal matrix and a master disc suitable for

A record carrier is described for optically writing and reading information, which record carrier is provided with a pre-formed track. This track is formed by a ridge disposedon the substrate surface and the recording layer comprises a dye layer having such a thickness at the location of the ridge that a write beam can produce a maximum optical effect therein, the dye layer being thicker at locations outside the ridge.

Record carrier with a preformed information track for recording

Erasable optical recording element according to FIG. 1 having a substrate 1 and a recording layer 4 which is provided thereon and which satisfies the formula (QSb).sub.100-x M.sub.x, wherein Q is the element Ga or In, M is a metal or chalcogenide element and x has the value 2-15, as well as a method of optically recording and erasing information in which under the influence of pulsated laser light amorphous info areas 10 are formed in the recording layer 4, which areas can be reverted by laser light to the crystalline phase and can be erased.

Erasable optical recording element and method of optically recording and

According to the method a rotating recording element 23 (FIG. 3) having a crystalline recording layer 28 of the composition Q.sub.x Sb.sub.y Te.sub.z, wherein Q=In, Ga; X=34-44 at. %; y=51-62 at. %; Z=2-9 at. %; is exposed to a pulsated laser light spot 29 (FIG. ) in which amorphous information bits are formed which are read by means of weak laser light 30 and which can be erased in real time during one revolution of the element 23 by means of a laser light erasing spot 33 (FIG. 4) and be returned to the crystalline state.

Method of optically recording and erasing information

A method is provided for the optical recording of information in which an amorphous recording layer 4 having a composition according to formula (1) provided on a synthetic resin substrate (2) (FIG. 1) in a maximum layer thickness of 150 nm is exposed of infrared laser light having a wavelength of 750-900 nm and pulsed in accordance with the binary information to be recorded with a pulse time of at most 200 ns. A crystalline area 6 (bit) having maximum dimensions of a few micrometers is formed in the amorphous layer in the exposed places. As optical recording element is also provided for use in the method.

Method for the optical recording of information and an optical recording

A method of manufacturing a homogeneous, water-insoluble dye layer on a substrate is provided in which a solution of a cationic or anionic dye in an organic solvent is provided on the substrate, the solvent is removed and the resulting dye layer is treated with an aqueous solution of a salt in which the cation of the anionic dye is exchanged for the cation of the salt or is treated with a salt or acid in which the anion of the cationic dye is exchanged for the anion of the salt or acid. The invention also provides a substrate provided with water insoluble homogeneous dye layer.

Method of manufacturing a water-insoluble dye layer on a substrate and

A method for the optical recording of information in which a recording layer 4 of In.sub.x Sb.sub.1-x, Ga.sub.x Sb.sub.1-x or (InSb).sub.y Se.sub.1-y, wherein 0.4.ltoreq.x.ltoreq.0.6 and 0.7.ltoreq.1.0, or mixtures thereof, provided on a synthetic resin substrate (2) (FIG. 1) in a maximum layer thickness of 150 nm is exposed to infrared laser light having a wavelength of 750-900 nm which is pulsated in accordance with the binary information to be recorded with a pulse time of at most 200 ns, a crystalline area 6 (bit) having maximum dimensions of a few micrometers being formed in the amorphous layer in the exposed places, as well as an optical recording element used in the method.

An optical recording element having a recording layer which comprises an alkylpyrylium-squarylium dye, as well as novel alkylpyrylium-squarylium compounds.

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Eindhoven, Netherlands

Dirk J Gravesteijn