Agere Systems Inc.

Cisco Technology, Inc.

Lsi Corporation

Other

Northrop Grumman Systems Corporation

Agere Syatems Inc.

Dipankar Bhattacharya

John Christopher Kriz

Makeshwar Kothandaraman

Bernard Lee Morris

Yehuda Smooha

Jeffrey Jay Nagy

Pankaj Kumar

Stefan Allen Siegel

Duane J Loeper

Joseph E Simko

Antonio M Marques

Dileep Kumar Devireddy

Donald Lynn Miller

Venkateshwar Rao Pullela

Bhushan Mangesh Kanekar

Pramod Elamannu Parameswaran

Ketan Arun Padwekar

Gyaneshwar S Saharia

Qizhong Chen

Peter J Nicholas

Ashish V Shukla

Michael R Smith

Quentin P Herr

William Burdett Wilson

Yiren Huang

Raymond Kloth

Jaushin Lee

Randall M Burnett

Haitao O Dai

Carol Ann Huber

Bangalore Priyadarshan

Kevin D Morishige

James John Bradley

François Gautier-Le Boulch

Gregg R Harleman

Che Coi Leung

Jeff Hirschman

One example describes a superconducting current source system comprising a linear flux-shuttle. The linear flux-shuttle includes an input and a plurality of Josephson transmission line (JTL) stages. Each of the JTL stages includes at least one Josephson junction, an output inductor, and a clock input. The linear flux-shuttle can be configured to generate a direct current (DC) output current via the output inductor associated with each of the JTL stages in response to the at least one Josephson junction triggering in a sequence in each of the JTL stages along the linear flux-shuttle in response to receiving an input pulse at the input and in response to a clock signal provided to the clock input in each of the JTL stages.

Superconducting current source system

One example includes a pulse selector system. The pulse selector system includes an input Josephson transmission line (JTL) configured to propagate an input reciprocal quantum logic (RQL) pulse received at an input based on a bias signal. The RQL pulse includes a fluxon and an antifluxon. The system also includes an escape Josephson junction coupled to an output of the input JTL. The escape Josephson junction can be configured to pass a selected one of the fluxon and the antifluxon of the RQL pulse and to trigger in response to the other of the fluxon and the antifluxon of the RQL pulse to block the other of the fluxon and the antifluxon of the RQL pulse. The system further includes an output JTL configured to propagate the selected one of the fluxon and the antifluxon as a unipolar pulse to an output based on the bias signal.

Pulse selector system

A compensation circuit for controlling a variation in output impedance of at least one buffer circuit includes a monitor circuit and a control circuit coupled with the monitor circuit. The monitor circuit includes a pull-up portion including at least one PMOS transistor and a pull-down portion comprising at least one NMOS transistor. The monitor circuit is configured to track an operation of an output stage of the buffer circuit and is operative to generate at least a first control signal indicative of a status of at least one characteristic of corresponding pull-up and pull-down portions in the output stage of the buffer circuit over variations in PVT conditions to which the buffer circuit may be subjected. The control circuit is operative to generate a set of digital control bits as a function of the first control signal. The set of digital control bits is operative to compensate the pull-up and pull-down portions in the output stage of the buffer circuit over prescribed variations in PVT conditions.

Hybrid impedance compensation in a buffer circuit

A voltage translator circuit () includes an input stage () adapted for receiving an input signal referenced to a first voltage supply (VDD core), a latch () adapted for connection to a second voltage supply (VDD) and operative to at least temporarily store a logic state of the input signal, and a voltage clamp () coupled between the input stage () and the latch (). The voltage clamp () is operative to set a maximum voltage across the latch () to a first prescribed level and to set a maximum voltage across the input stage to a second prescribed level. The voltage translator circuit () generates a first output signal (II) at a junction between the latch () and the voltage clamp (). The voltage translator circuit generates a second output signal () at a junction between the voltage clamp () and the input stage ().

Voltage level translator circuit

A voltage translator circuit includes an input stage adapted for receiving an input signal referenced to a first voltage supply, a first latch circuit adapted for connection with a second voltage supply and operative to at least temporarily store a logic state of the input signal, and a voltage clamp coupled between the input stage and the first latch circuit. The voltage clamp is operative to set a maximum voltage across the input stage to a prescribed level. The voltage translator circuit generates a first output signal at a first output formed at a junction between the first latch circuit and the voltage clamp. A second latch circuit is connected to the first output in a feedback configuration. The second latch circuit is operative to retain a logical state of the first output signal as a function of at least a first control signal supplied to the second latch circuit regardless of a state of the first voltage supply.

Mode latching buffer circuit

A compensation circuit for controlling a variation in output impedance of at least one buffer circuit includes a monitor circuit having a pull-up portion comprising at least one PMOS transistor and a pull-down portion comprising at least one NMOS transistor. The monitor circuit is configured to track an operation of an output stage in the buffer circuit and is operative to generate a first control signal indicating a status of at least one characteristic of corresponding pull-up and pull-down portions in the output stage over variations in PVT conditions to which the buffer circuit may be subjected. The compensation circuit further includes a control circuit generating first and second sets of digital control bits for compensating the pull-up and pull-down portions in the output stage over prescribed variations in PVT conditions. The second set of digital control bits is generated based at least on the first set of digital control bits and the first control signal.

Impedance compensation in a buffer circuit

An ESD protection circuit includes a first voltage clamp, connected between a first voltage supply node and a second voltage supply node of the circuit, and a second voltage clamp, connected between the second voltage supply node and a voltage return of the circuit. The first voltage supply node is adapted to receive a first voltage which is greater than a prescribed gate oxide reliability potential of the circuit. The second voltage supply node is operative to receive a second voltage which is less than the first voltage. The first voltage clamp is operative to clamp the first voltage on the first voltage supply node to a first value during an ESD event between the first and second voltage supply nodes, and the second voltage clamp is operative to clamp the second voltage on the second voltage supply node to a second value during an ESD event between the second voltage supply node and the voltage return.

Electrostatic discharge protection circuit

Described embodiments provide for protecting from DC and transient over-voltage conditions an input/output ('I/O') buffer having first and second I/O transistors. The first I/O transistor is coupled to a first over-voltage protection circuit adapted to prevent an over-voltage condition on at least the first I/O transistor. The second I/O transistor is coupled to a second over-voltage protection circuit adapted to prevent an over-voltage condition on at least the second I/O transistor. First and second bias voltages are generated from an operating voltage of the buffer. A third bias voltage is generated from either i) the first bias voltage, or ii) an output signal voltage of the buffer and a fourth bias voltage is generated from either i) the second bias voltage, or ii) the output signal voltage of the buffer. The third and fourth bias voltages are provided to the first and second over-voltage protection circuits, respectively.

I/O buffer with low voltage semiconductor devices

Disclosed is a bias circuit with a first resistor connected between the supply voltage and a feedback node. Resistors are connected in series between the feedback node and the reference supply voltage. The connections between the resistors define at least one bias voltage. A second resistor is connected between the feedback node and a first drain node. A first field-effect transistor has a first gate node, the first drain node, and a first source node. The gate node is connected to the first supply voltage. A second field-effect transistor has a second gate node, a second drain node, and a second source node. The second drain node is connected to the first source node. The second gate node is connected to the bias voltage. The second source node is connected to an output signal node. The output signal node capable of experiencing an overshoot voltage.

Bias circuit scheme for improved reliability in high voltage supply with low voltage device

A source-synchronous parallel interface divides a wide data bus into clock-groups including a sub-group of the data lines and a clock line carrying a copy of the transmit clock. The traces in a clock-group are located physically close together to minimize skew between the signals carried on the traces of the clock-group. Deskew logic on the receiver compensates for skew between received clock-group signals.

Aligning data in a wide, high-speed, source synchronous parallel link

A compensated buffer circuit operative in one of at least a first mode and a second mode includes a plurality of output blocks and a plurality of predrivers, each of the predrivers having an output connected to an input of a corresponding one of the output blocks. Respective outputs of the output blocks are connected together and form an output of the buffer circuit. The output blocks are arranged in a sequence and are binary weighted such that a drive strength of a given one of the output blocks is about twice as large as a drive strength of an output block immediately preceding the given output block. Each of the predrivers selectively enables the corresponding output block connected thereto as a function of a control signal supplied to the predriver for compensating the buffer circuit for PVT variations to which the buffer circuit may be subjected. The respective control signals supplied to the predrivers collectively represent a binary code word, the binary code word in the second mode being equivalent to an arithmetic shift of the binary code word in the first mode.

Multiple-mode compensated buffer circuit

A compensation circuit for compensating an output impedance of at least a first MOS device over PVT variations to which the first MOS device may be subjected includes a first current source generating a first current having a value which is substantially constant and a second current source generating a second current having a value which is programmable as a function of at least one control signal presented to the second current source. A comparator is connected to respective outputs of the first and second current sources and is operative to measure a difference between the respective values of the first and second currents and to generate an output signal indicative of relative magnitudes of the first current and the second current. A processor connected in a feedback arrangement between the comparator and the second current source receives the output signal generated by the comparator and generates the control signal for controlling the second current as a function of the output signal. The processor is operative to control the value of the second current so that the second current is substantially equal to the first current.

Enhanced output impedance compensation

A circuit for selectively bypassing a capacitive element includes at least one NMOS device selectively connectable across the capacitive element to be bypassed, and at least first and second PMOS devices. The PMOS devices are selectively connectable together in series across the capacitive element to be bypassed. The NMOS device provides a first bypass path and the first and second PMOS devices collectively provide a second bypass path.

Circuit for selectively bypassing a capacitive element

An ESD clamp circuit for use between separate power rails. An ESD clamp is based on a wide nMOSFET. A symmetrical circuit is designed vis-&#xe0;-vis the two power rails, with respect to ground, allowing discharge of an ESD surge in both polarities of stress. An nMOSFET device drives the gate of a large nMOSFET (e.g., having a device width between 1000 and 10,000 microns). The large power rail-to-power rail nMOSFET has its gate controlled by the output inverter stage of either ESD detection circuit connected to a respective power supply rail. The gate is switched to a common ground during normal operation of the integrated circuit.

Power pin to power pin electro-static discharge (ESD) clamp

An IC having improved reliability includes at least first and second circuit blocks and at least first and second power domains, the first circuit block being connected to the first power domain and the second circuit block being connected to the second power domain. The IC further includes at least one control circuit configured to generate at least first and second control signals. The first control signal is operative to selectively connect the first power domain to a first voltage supply, and the second control signal is operative to selectively connect the second power domain to a second voltage supply. The IC includes at least first and second clamp circuits, the first clamp circuit being connected to the first power domain, the second clamp circuit being connected to the second power domain. Each of the clamp circuits is operative to prevent a voltage on a corresponding power domain from rising above a prescribed voltage level for the corresponding power domain.

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Macungie, PA, United States of America

Dipankar Bhattacharya