Micron Technology Incorporated

Dionisio Minopoli

Daniele Balluchi

Luca Porzio

Gianfranco Ferrante

Emanuele Confalonieri

Nicola Colella

Antonino Caprí

Marco Sforzin

Ting Luo

Olivier Duval

Walter Di Francesco

Giuseppe D'Eliseo

Umberto Siciliani

Christian M Gyllenskog

Roberto Izzi

Tao Liu

Antonino Pollio

Giuseppe Ferrari

Luigi Esposito

Elio D'Ambrosio

Anna Chiara Siviero

Anna Scalesse

Allison Jayne Olson

Angelo Avino

Ciro Chiacchio

Methods, systems, and devices for memory-aligned access operations are described. A target packet size based on a quantity of physical pages addressable by individual first-level pages of a first-level page table for mapping logical address to respective physical pages may be indicated to a host system. A buffer may be configured based on the target packet size and data for an application at the host system and associated with the target packet size may be stored in the buffer. Based on a utilization threshold of the buffer being reached, a set of data stored in the buffer and having the target packet size may be written to a memory device, where a set of physical addresses for storing the set of data may be identified based on a second-level entry of a second-level page.

Memory-aligned access operations

Methods, systems, and devices for setting switching for single-level cells (SLCs) are described. A memory system may receive an access command from a host. The access command may correspond to an SLC block or to a multiple-level cell block. If the access command corresponds to an SLC block, the memory system may modify the access command to include one or more bits indicating a setting to use for performing the access operation corresponding to the access command. The setting may define one or more operating parameters for performing the access operation. The memory system may use bits to indicate the setting that are used to indicate a page address for multiple-level cell blocks. The memory system may issue the access command to a memory device, which may perform the access operation using the setting indicated in the one or more bits included by the memory system.

Setting switching for single-level cells

Methods, systems, and devices for techniques for atomic write operations are described. A memory system may determine a set of pages for an atomic write operation in which data associated with a write command is linked together for writing to a non-volatile memory. The memory system may write, to the non-volatile memory, metadata that indicates the set of pages is associated with the atomic write operation. Based on the metadata, the memory system may determine whether each page of the set of pages has been written with data for the atomic write operation. The memory system may then communicate to a host system an indication of a completion status for the atomic write operation based on determining whether each page of the set of pages has been written with the data for the atomic write operation.

Techniques for atomic write operations

A method including obtaining temperature values of at least one region of the non-volatile memory, each temperature value obtained at a given time instant, for each obtained temperature value at each given time instant, calculating the value of an operating function representative of an operating condition of the non-volatile memory, the value such operating function being time-dependent according to the temperature time-variation of such at least one region of the non-volatile memory, summing subsequent computed values of said operating function to obtain an accumulated value being representative of an elapsed fraction of a time limit associated with the at least one region of the non-volatile memory, comparing the accumulated value with a threshold value, and, based on said comparison, performing a management operation on the cells of the at least one region of the non-volatile memory when the accumulated value has a magnitude equal or greater than the threshold value.

Methods, devices and systems for an improved management of a non-volatile memory

Methods, systems, and devices for automotive boot optimization are described. For instance, a memory system may record addresses that are accessed as part of multiple phases of a first boot-up procedure. During a second boot-up procedure, the memory system may transfer, from a logical block address of a non-volatile memory device to a volatile memory device, information for a respective phase based on the recording of the phases of the first boot-up procedure. The memory system may receive a command to transmit the information to a host system as part of the respective phase after transferring the information from the non-volatile device to the volatile memory device.

Automotive boot optimization by utilizing multiple phases of boot-up procedures

A processing device of a memory sub-system can monitor a plurality of received commands to identify a forced unit access command. The processing device can identify a metadata area of the memory device based on the forced unit access command. The processing device can also perform an action responsive to identifying a subsequent forced unit access command to the metadata area.

Memory device performance based on storage traffic pattern detection

The present disclosure relates to a method for improving the reading and/or writing phase in storage devices including a plurality of non-volatile memory portions managed by a memory controller, comprising: providing at least a faster memory portion having a lower latency and higher throughput with respect to said non-volatile memory portions and being bi-directionally connected to said controller; using said faster memory portion as a read and/or write cache memory for copying the content of memory regions including more frequently read or written logical blocks of said plurality of non-volatile memory portions. A specific read cache architecture for a managed storage device is also disclosed to implement the above method.

Cache architecture for a storage device

A processing device in a memory system receives, from a host system, a read command comprising an indication of a sub-region of a logical address space of a memory device. The processing device increments a counter associated with a region of the logical address space, the region comprising a plurality of sub-regions including the sub-region, the counter to track a number of read operations performed on the plurality of sub-regions of the region, wherein the counter is periodically decremented in response to an occurrence of a recency event on the memory device. The processing device further determines whether a value of the counter satisfies a cacheable threshold criterion and, responsive to the value of the counter satisfying the cacheable threshold criterion, sends, to the host system, a recommendation to activate the sub-region.

Caching or evicting host-resident translation layer based on counter

Logical to physical tables each including logical to physical address translations for first logical addresses can be stored. Logical to physical table fragments each including logical to physical address translations for second logical address can be stored. A first level index can be stored. The first level index can include a physical table address of a respective one of the logical to physical tables for each of the first logical addresses and a respective pointer to a second level index for each of the second logical addresses. The second level index can be stored and can include a physical fragment address of a respective logical to physical table fragment for each of the second logical addresses.

Logical to physical table fragments

A processing device in a memory system receives, from a host system, a host-resident translation layer read command comprising a physical address of data to be read from a memory device, wherein the physical address is indicated in at least a portion of a translation layer entry previously provided to the host system with a response to a host-resident translation layer write command and stored in a host-resident translation layer mapping table. The processing device further performs a read operation to read the data stored at the physical address from the memory device and sends, to the host system, the data from the physical address of the memory device.

Host-resident translation layer write command

In an example, a starting address corresponding to a location of particular information within a non-volatile storage memory is determined during an initialization process using a multilevel addressing scheme. Using the multilevel addressing scheme may include performing multiple reads of the storage memory at respective address levels to determine the starting address corresponding to the location of the particular information.

Multilevel addressing

The present disclosure relates to a method for improving the reading and/or writing phase in storage devices including a plurality of non-volatile memory portions managed by a memory controller, comprising: A specific read cache architecture for a managed storage device is also disclosed to implement the above method.

The present disclosure includes an interface for memory having a cache and multiple independent arrays. An embodiment includes a memory device having a cache and a plurality independent memory arrays, a controller, and an interface configured to communicate a plurality of commands from the controller to the memory device, wherein the interface includes a pin configured to activate upon a first one of the plurality of commands being received by the memory device and deactivate once all of the plurality of commands have been executed by the memory device.

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Arzano, Italy

Dionisio Minopoli