Air Products and Chemicals, Inc.

Dingjun Wu

Eugene Joseph Karwacki, Jr

Bing Ji

Mark Leonard O'Neill

Raymond Nicholas Vrtis

Jean Louise Vincent

Chun Christine Dong

Gowri Krishnamurthy

Aaron Scott Lukas

Stephen Andrew Motika

Mark Daniel Bitner

Timothy Christopher Golden

Madhukar Bhaskara Rao

Nasim Ul Hassan Malik

Paul Higginbotham

Ronald Martin Pearlstein

David A Roberts

Jianguo Xu

Roger Dean Whitley

Edward Landis Weist, Jr

Philip Bruce Henderson

Andrew David Johnson

Anupama Mallikarjunan

Bryan Clair Hoke, Jr

Shubhra Jyoti Bhadra

Glenn Paul Wagner

Blaine Edward Herb

Paula Jean Battavio

Mozhgan Alimohammadi Zanjani

Martin Jay Plishka

Todd M Moyle

Peter Richard Badowski

Michelle Roaf

A method and system for purifying a carbon dioxide feed stream in which the carbon dioxide feed stream is cooled and partially condensed to remove water upstream of an adsorber to produce a dry carbon dioxide stream. The dry carbon dioxide stream is further cooled and partially condensed in a carbon dioxide purification unit to form a carbon dioxide product stream. Excess refrigeration duty from the carbon dioxide purification unit is used to cool the carbon dioxide feed stream.

Dehydration of carbon dioxide

A method and apparatus for purifying air via a pre-purification unit (PPU) of an air separation unit (ASU) system can include passing air through a first adsorber of the PPU to purify the air for operation of the ASU system while it is at or below a first pre-selected operational capacity. In response to the operational capacity of the ASU system needing to be increased to a level above the first pre-selected operational capacity threshold, a second adsorber can be brought on-line in parallel with the first adsorber or in series with the first adsorber to provide improved purification capacity to account for the increased demand for purification capacity resulting from the increased operational capacity of the ASU system. This second adsorber can be different from the first adsorber (e.g. different in size, adsorption capacity for impurities within air, and/or configuration, etc.).

Pre-purification arrangement for air separation and method of hybrid air purification

A method of purifying air via a pre-purification unit (PPU) of an air separation unit (ASU) system having a pre-PPU chiller that is upstream of the PPU to cool compressed air before the compressed air is fed to the PPU can include passing air through an adsorber of the PPU to pass the air through a bed of adsorbent material within a vessel of the adsorber. In response to the pre-PPU chiller being determined to have an issue resulting in the pre-PPU chiller being tripped or requiring the pre-PPU chiller to be taken off-line, continuing to operate the ASU system at a full capacity even though nitrous oxide (N2O) within the air output from the PPU exceeds a first pre-selected threshold and is below a second pre-selected threshold associated with carbon dioxide (CO2) breakthrough. An ASU and a PPU can be designed to implement an embodiment of the method.

Air separation apparatus, adsorber, and method

Disclosed herein are multi-bed rapid cycle pressure swing adsorption (RCPSA) processes for separating Ofrom Nand/or Ar, wherein the process utilizes at least five adsorption beds each comprising a kinetically selective adsorbent for Ohaving an Oadsorption rate (1/s) of at least 0.20 as determined by linear driving force model at 1 atma and 86&#xb0; F.

Multi-bed rapid cycle kinetic PSA

A pressure swing adsorption process for an adsorption system having 12 adsorption beds, the process having a cycle with 5 pressure equalization steps. Background is provided for the various pressure swing adsorption cycle steps.

Pressure swing adsorption process

The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.

Materials and methods of forming controlled void

The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.

This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus, germanium, arsenic, and mixtures thereof, from silicon dioxide, silicon nitride, nickel, aluminum, TiNi alloy, photoresist, phosphosilicate glass, boron phosphosilicate glass, polyimides, gold, copper, platinum, chromium, aluminum oxide, silicon carbide and mixtures thereof. The process is related to the important applications in the cleaning or etching process for semiconductor deposition chambers and semiconductor tools, devices in a micro electro mechanical system (MEMS), and ion implantation systems. Methods of forming XeFby reacting Xe with a fluorine containing chemical are also provided, where the fluorine containing chemical is selected from the group consisting of F, NF, CF, CF, CF, SF, a plasma containing F atoms generated from an upstream plasma generator and mixtures thereof.

Selective etching and formation of xenon difluoride

The present invention provides an adsorbent for removing water and/or other oxygen-containing impurities from a fluid comprising ammonia to the ppb level and methods for making and using same. The adsorbent preferably comprises a substrate having a plurality of pores and a surface area that ranges from about 100 to about 2,500 m/g and a compound disposed within a least a portion of the substrate. In certain preferred embodiments, the compound comprises at least one cation from the group consisting of ammonium (I), lithium (I), sodium (I), potassium (I), cesium (I); magnesium (II), calcium (II), strontium (II), barium (II), manganese (II), nickel (II), iron (II), zinc (II); aluminum (III), indium (III), iron (III), and zirconium (IV) or combinations thereof that is ionically associated with an anion from the group consisting of halide, sulfide, sulfite, or sulfate.

Adsorbent for water removal from ammonia

A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the substance deposited thereupon wherein the substance comprises a transition metal ternary compound, a transition metal quaternary compound, and combinations thereof; reacting the substance with a process gas comprising a fluorine-containing gas and optionally an additive gas to form a volatile product; and removing the volatile product from the substrate to thereby remove the substance from the substrate.

Removal of transition metal ternary and/or quaternary barrier materials from a substrate

A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.

Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials

A process for the selective removal of a TiO-containing substance from an article for cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a TiO-containing substance from an article comprising: providing the article having the TiO-containing substance deposited thereupon; reacting the substance with a reactive gas comprising at least one selected from a fluorine-containing cleaning agent, a chlorine-containing cleaning agent and mixtures thereof to form a volatile product; and removing the volatile product from the article to thereby remove the substance from the article.

Method for removing titanium dioxide deposits from a reactor

Purification material for removing a contaminant from an impure hydride gas comprising an adsorbent comprising a reduced metal oxide on a porous support and a desiccant. The porous support may be selected from the group consisting of activated carbon, alumina, silica, zeolite, silica alumina, titania, zirconia, and combinations thereof. The reduced metal oxide may comprise one or more metals selected from the group consisting of Group I alkali metals (lithium, sodium, potassium, rubidium, and cesium), Group II alkaline earth metals (magnesium, calcium, strontium, and barium), and transition metals (manganese, nickel, zinc, iron, molybdenum, tungsten, titanium, vanadium, cobalt, and rhodium). The desiccant may be selected from the group consisting of hygroscopic metal salts, zeolites, single metal oxides, mixed metal oxides, and combinations thereof.

Purification of hydride gases

This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.

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Macungie, PA, United States of America

Dingjun Wu