Norwegian University of Science and Technology

Crayonano as

Dingding Ren

Helge Weman

Dong Chul Kim

Mazid Munshi

Dasa Dheeraj

Ida Marie Høiaas

Bjørn Ove Fimland

Bjorn Ove Myking Fimland

Bjørn Ove Myking Fimland

A device, such as a light-emitting device, e.g. a laser device, comprising: a plurality of group III-V semiconductor NWs grown on one side of a graphitic substrate, preferably through the holes of an optional hole-patterned mask on said graphitic substrate; a first distributed Bragg reflector or metal mirror positioned substantially parallel to said graphitic substrate and positioned on the opposite side of said graphitic substrate to said NWs; optionally a second distributed Bragg reflector or metal mirror in contact with the top of at least a portion of said NWs; and wherein said NWs comprise aim-type doped region and a p-type doped region and optionally an intrinsic region there between.

Lasers or LEDs based on nanowires grown on graphene type substrates

A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.

Process for growing nanowires or nanopyramids on graphitic substrates

A composition of matter comprising at least one nanostructure grown epitaxially on an optionally doped &#x3b2;-GaOsubstrate, wherein said nanostructure comprises at least one group III-V compound.

Nanostructure

Growing community of inventors

Trondheim, Norway

Dingding Ren