Soitec

Arizona State University

Array Photonics, Inc.

Cactus Materials, Inc.

Ding Ding

Chantal Arena

Jean-Philippe Debray

Heather McFavilen

Li Huang

Yong-Hang Zhang

Ferran Suarez

Elizabeth H Steenbergen

Aymeric Maros

Philip Dowd

Semiconductor devices comprising a semiconductor edge filter, a first light absorbing region overlying the semiconductor edge filter and a second light absorbing region underlying the semiconductor edge filter are disclosed. The semiconductor edge filter has a high reflectivity over a first wavelength range absorbed by the overlying light absorbing region and a high transmission over a second wavelength range absorbed by the underlying light absorbing region.

Multijunction solar cells and multicolor photodetectors having an integrated edge filter

Semiconductor optoelectronic devices having a dilute nitride active region are disclosed. In particular, the semiconductor devices have a dilute nitride active region with at least two bandgaps within a range from 0.7 eV and 1.4 eV. Photodetectors comprising a dilute nitride active region with at least two bandgaps have a reduced dark current when compared to photodetectors comprising a dilute nitride active region with a single bandgap equivalent to the smallest bandgap of the at least two bandgaps.

Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions

Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising InGaN, and at least one barrier layer comprising InGaN proximate the at least one well layer. In some embodiments, the value of w in the InGaN of the well layer may be greater than or equal to about 0.10 and less than or equal to about 0.40 in some embodiments, and the value of b in the InGaN of the at least one barrier layer may be greater than or equal to about 0.01 and less than or equal to about 0.10. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light emitting device, such as an LED. Luminary devices include such LEDs.

Semiconductor structures having active regions including indium gallium nitride, methods of forming such semiconductor structures, and related light emitting devices

Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures

Two-terminal multi junction photodetectors and focal plane arrays for multi-color detection or imaging acquisition can be formed by connecting photodiodes with different bandgaps or wavelengths, through tunnel diodes, in series with the same polarization. Under reverse bias in the dark, the total current going through such multi junction photodetectors is dictated by the smallest reverse saturation current of the photodiodes. When in operating mode, a set of light sources with different wavelengths corresponding to each individual photodiode can be used to optically bias all the photodiodes except the detecting photodiode Under illumination, all other photodiodes work in the photovoltaic mode and have much higher maximum possible reverse currents than the detecting photodiode. As a result, the total current of the multi junction photodetector is dictated by the detecting photodiode. Therefore, a total current can be read by, for example, read-out circuits to give the optical signal strength at that specific wavelength of the detecting photodiode. By using an algorithm one can use such multi junction photodetectors to detect different wavelengths and to take multicolor images.

Two-terminal multi-color photodetectors and focal plane arrays

Growing community of inventors

Chandler, AZ, United States of America

Ding Ding