Globalfoundries Inc.

Dinesh R Koli

Shafaat Ahmed

Haigou Huang

Qiang Fang

Deepasree Konduparthi

Jiehui Shu

Vimal Kumar Kamineni

Zhiguo Sun

Wei-Tsu Tseng

Chih-Chiang Chang

Benjamin G Moser

Tai Fong Chao

Vishal Chhabra

Xingzhao Shi

Changhong Wu

Eric J Bodensieck

Yuan Zhou

Aldrin Bernard Anak Vincent Eddy

Sunghoon Lee

Sung Pyo Jung

A gimbal for a conditioning system for a CMP tool is configured to maintain a conditioning disk in contact with a polishing pad of the CMP tool. The gimbal includes an arm coupling for coupling to a conditioning swing arm of the CMP tool; and a disk holder for holding the conditioning disk. A flexible diaphragm extends between the arm coupling and the disk holder. The flexible diaphragm allows the disk holder to flex relative to the arm coupling. The flexible diaphragm is made of a metal or metal alloy.

Gimbal for CMP tool conditioning disk having flexible metal diaphragm

The present disclosure relates to semiconductor structures and, more particularly, to a cobalt plated via integration scheme and methods of manufacture. The structure includes: a via structure composed of cobalt material; and a wiring structure above the via structure. The wiring structure is lined with a barrier liner and the cobalt material and filled with conductive material.

Cobalt plated via integration scheme

The disclosure relates to a method of forming a Co contact module, the method including depositing a liner layer on a trench block, partially plating the lined trenches with Co as a first metal such that the resulting Co layer has a top surface below an opening top surface of a shallowest trench, depositing a second metal on the Co layer and exposed surfaces of the liner layer, planarizing the second metal layer, and etching the second metal layer and portions of the liner layer. The disclosure also relates to a Co contact module formed by the noted method.

Method of forming cobalt contact module and cobalt contact module formed thereby

Methods of forming a SAC cap with SiN U-shaped and oxide T-shaped structures and the resulting devices are provided. Embodiments include forming a substrate with a trench and a plurality of gate structures; forming a nitride liner over portions of the substrate and along sidewalls of each gate structure; forming an ILD between each gate structure and in the trench; recessing each gate structure between the ILD; forming a U-shaped nitride liner over each recessed gate structure; forming an a-Si layer over the nitride liner and the U-shaped nitride liner; removing portions of the nitride liner, the U-shaped nitride liner and the a-Si layer; forming a W layer over portions of the substrate adjacent to and between the a-Si layer; forming an oxide liner over the nitride liner, the U-shaped nitride liner and along sidewalls of the W layer; and forming an oxide layer over portions of the oxide liner.

Advanced structure for self-aligned contact and method for producing the same

The present disclosure relates to semiconductor structures and, more particularly, to a corrosion and/or etch protection layer for contacts and interconnect metallization integration structures and methods of manufacture. The structure includes a metallization structure formed within a trench of a substrate and a layer of cobalt phosphorous (CoP) on the metallization structure. The CoP layer is structured to prevent metal migration from the metallization structure and corrosion of the metallization structure during etching processes.

Corrosion and/or etch protection layer for contacts and interconnect metallization integration

Devices and methods of forming an integrated circuit and a FinFET device with a planarized permanent layer are provided. In an embodiment, a method of forming a planarized permanent layer includes providing a base substrate that has an uneven surface topography. A permanent layer is conformally formed over the base substrate. The permanent layer includes raised portions and sunken portions that correspond to the surface topography of the base substrate. A sacrificial layer is conformally formed over the permanent layer. The sacrificial layer and the raised portions of the permanent layer are chemical-mechanical planarized to provide the planarized permanent layer. The sacrificial layer is substantially completely removed after chemical-mechanical planarizing.

Methods of forming integrated circuits with a planarized permanent layer and methods for forming FinFET devices with a planarized permanent layer

A semiconductor structure includes a source region, a drain region, a channel region and a gate region over a bulk silicon substrate. The gate region further includes a dielectric layer and one or more work function layers disposed over the dielectric layer. A first filler material, such as a flowable oxide is provided over the source region and the drain region. A second filler material, such as an organic material, is provided within the gate region. The first filler material and the second filler material are selectively removed to create, source, drain and gate openings. The gate, source and drain openings are filled simultaneously with a metal, such as tungsten, to create a metal gate structure, source contact and drain contact.

Common fill of gate and source and drain contacts

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Mechanicville, NY, United States of America

Dinesh R Koli