Netlogic Microsystems, Inc

Broadcom Corporation

Dimitri Argyres

Varadarajan Srinivasan

Bindiganavale S Nataraj

Ganesh Krishnamurthy

A CAM cell is disclosed that can be selectively configured to store either base-2 data words or base-3 data words. When configured to store base-3 data words, the quaternary CAM cell compares 3 comparand bits representative of a base-3 comparand value with the base-3 data value stored in the CAM cell. Storing base-3 data words in such CAM cells increases the data storage density of associated CAM arrays.

Content addressable memory with base-three numeral system

A CAM device for comparing a search key with a plurality of ternary words stored in a CAM array includes one or more population counters, a pre-compare memory, and a pre-compare circuit. The present embodiments reduce the power consumption of CAM devices during compare operations between a search key and ternary words stored in a CAM array by selectively enabling the match lines in the CAM array in response to pre-compare operations between a set of population counts corresponding to the masked search key and a set of population counts corresponding to the ternary words stored in the CAM array.

Power savings in a content addressable memory device using masked pre-compare operations

A content addressable memory (CAM) row is disclosed. The CAM row includes one or more compare circuits coupled between a match line and a virtual-ground line. The compare circuits are configured to compare a search key with CAM cell data words. The CAM row also includes a pre-charge circuit controlled by a pre-charge signal, and includes a tank capacitor. The pre-charge circuit is configured to pre-charge the match line to a supply voltage in response to assertion of the pre-charge signal. A pull-down transistor dynamically discharges the virtual-ground line to ground potential.

Content addressable memory row having virtual ground and charge sharing

Power consumption of CAM devices is reduced during compare operations between a search key and data stored in the device's array by reducing the amount of electric charge by which the match line is discharged during mismatch conditions. More specifically, for some embodiments, each row of the CAM array includes circuitry that discharges the match line to a virtual ground node rather than to ground potential during mismatch conditions. Because the electrical potential on the virtual ground node is greater than ground potential, power consumption associated with charging the match line back to a logic high state during the next compare operation is reduced.

Content addressable memory array having virtual ground nodes

Systems, methods, and circuits provide phase inversion of a clock signal. A first clock signal is received. A phase inversion signal indicates the existence of a 180 degree phase difference between the first clock signal and a second clock signal. As a result of the phase inversion signal indicating the 180 degree phase difference, the system, methods and circuits adapt the first clock signal by extending the first clock signal by a phase such that the first clock signal's rising edges and falling edges align with the second clock signal's rising edges and falling edges. As a result, the 180 degree phase difference between the clock signals is eliminated.

Systems, circuits, and methods for phase inversion

Quaternary CAM cells are provided that include a compare circuit having a discharge path between a match line and ground potential, the single discharge path consisting essentially of a single transistor. In an embodiment, the single transistor has a gate coupled to a pull-down node and the compare circuit includes first and second gating transistors connected in series between the pull-down node and a ground potential, the first gating transistor having a gate to receive a comparand bit, and the second gating transistor having a gate to receive a complemented comparand bit.

Quaternary content addressable memory cell having one transistor pull-down stack

Ternary CAM cells are disclosed that include a compare circuit that includes a discharge path having a single pull-down transistor coupled between the match line and ground potential.

Ternary content addressable memory cell having single transistor pull-down stack

Ternary CAM cells include a compare circuit including a discharge path having only two pull-down transistors coupled between the match line and ground potential.

Ternary content addressable memory cell having two transistor pull-down stack

A CAM array includes a plurality of regular rows and a reference row. Each regular row is partitioned into a plurality of row segments, with each row segment including a number of CAM cells coupled to a corresponding match line segment. The reference row generates self-timed control signals for corresponding segments of the regular rows. Control circuits selectively enable a respective row segment in response to a logical combination of match results in a previous row segment and an associated one of the self-timed control signals.

Self-timed match line cascading in a partitioned content addressable memory array

Quaternary CAM cells are provided that include one or more compare circuits that each has a minimal number of pull-down transistors coupled between the match line and ground potential. For some embodiments, the compare circuit includes two parallel paths between the match line and ground potential, with each parallel path consisting of a single pull-down transistor having a gate selectively coupled to the stored data value in response to a comparand value.

Fast quaternary content addressable memory cell

An integrated circuit (IC) device including a substrate, a plurality of device layers formed over the substrate, and a plurality of multi-level revision (MLR) structures that generate a revision code indicative of device revisions. Each MLR group structure includes a number of MLR cells and includes a parity circuit having a number of inputs coupled to the outputs of the MLR cells and having an output to generate a corresponding bit of the revision code. The MLR cells in each MLR group structure are assigned to different device layers, and each device layer is assigned to one MLR cell in each MLR group structure. Each revision code bit is controllable by any MLR cell in the corresponding MLR group structure.

Configurable non-volatile logic structure for characterizing an integrated circuit device

An apparatus and method of transposing one or more bits in input data relative to other bits of the input data to form a comparand for searching in a content addressable memory. The comparand may have one or more bits rearranged from their order appearing in the input data such that one or more bits from a first segment of the input data are replaced with, or substituted by, one or more bits from a second segment of the input data.

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San Jose, CA, United States of America

Dimitri Argyres