Parcan Nanotech Co., Ltd.

Dimitre Karpuzov

Ivo Rangelow

Xiang-Qian Zhou

The present invention is related to a substrate () for a controlled implantation of ions () into a bulk (), the substrate () comprising the bulk () composed of a crystalline first material (), the bulk () comprising an implantation region () and a surface (), wherein the implantation region () is located within the bulk () and along an implantation direction () at an implantation depth () below an implantation area () on the surface () of the bulk (). Further, the present invention is related to a method of preparing a substrate () for a controlled implantation of ions () into a bulk (), preferably the aforementioned substrate (), the substrate () comprising the bulk () composed of a crystalline first material (), the bulk () comprising an implantation region () and the surface (), wherein the implantation region () is located within the bulk () and along an implantation direction () at an implantation depth () below an implantation area () on the surface () of the bulk ().

Growing community of inventors

Woodstock, Canada

Dimitre Karpuzov