Seagate Technology Incorporated

Other

Seagate Technologies, Inc.

Dimitar Velikov Dimitrov

Haiwen Xi

Xiaobin Wang

Yuankai Zheng

Dexin Wang

Yiran Chen

Song Sheng Xue

Zheng Gao

Hongyue Liu

Olle Gunnar Heinonen

Wei Tian

Xiaohua Lou

Dian Song

Hai Li

Insik Jin

Mark William Covington

Yong Lu

Wenzhong Zhu

Paul E Anderson

Kaizhong Gao

Wonjoon Jung

Michael C Kautzky

Mark Thomas Kief

Harry Hongyue Liu

Xuguang Alan Wang

Ming Sun

Michael Xuefei Tang

Eric Walter Singleton

Alan Xuguang Wang

Ivan Petrov Ivanov

Dion Song

Tong Zhao

Patrick Joseph Ryan

Qing I He

Andreas Karl Roelofs

Shuiyuan Huang

Kang Yong Kim

Jason Bryce Gadbois

Brian Lee

Jae-Young Yi

Henry F Huang

Venugopalan Vaithyanathan

Thomas Roy Boonstra

Muralikrishnan Balakrishnan

Sunita B Gangopadhyay

Yang Dong

Shaoping Li

Antoine Khoueir

Yuhang Cheng

Victor Sapozhnikov

YongJun Zhao

Martin Giles Blaber

Jie Gong

Konstantin Nikolaev

Justin Glen Brons

Daniel Seymour Reed

Ran Wang

Johannes Van Ek

Amit Sharma

Pat J Ryan

Eileen Yan

Declan Macken

James Gary Wessel

Nurul Amin

Huaqing Yin

Sining Mao

Alexander Mikhailovich Shukh

John D Stricklin

John Charles Duda

Scott Michael Franzen

Sharat Batra

Tae-Woo Lee

Daniel Paul Burbank

Weibin Chen

Eric Leroy Granstrom

Steven Carl Riemer

Robert William Lamberton

Richard P Michel

Venkatram Venkatasamy

Javier Ignacio Guzman

Richard P Larson

Christina L Hutchinson

Steve C Riemer

Xilin Peng

Yongchul Ahn

Anthony M Mack

William Hill Butler

Mohammed Sharia Ullah Patwari

Martin Louis Plumer

Scott Wilson Stokes

Xuefei Tang

David James Larson

Jumna P Ramdular

Markus Siegert

Carolyn Pitcher Van Dorn

Bradley Hugh Miller

Erli Chen

Lujun Chen

Thu Van Nguyen

Wei Tan

Devices that include a near field transducer (NFT), the NFT having at least one external surface; and at least one multilayer adhesion layer positioned on at least a portion of the at least one external surface, the multilayer adhesion layer including a first layer and a second layer, with the second layer being in contact with the portion of the at least one external surface of the NFT, the first layer including: yttrium (Y), scandium (Sc), zirconium (Zr), hafnium (Hf), silicon (Si), boron (B), tantalum (Ta), barium (Ba), aluminum (Al), titanium (Ti), niobium (Nb), calcium (Ca), beryllium (Be), strontium (Sr), magnesium (Mg), lithium (Li), or combinations thereof; and the second layer including: lanthanum (La), boron (B), lutetium (Lu), aluminum (Al), deuterium (D), cerium (Ce), uranium (U), praseodymium (Pr), yttrium (Y), silicon (Si), iridium (Ir), carbon (C), thorium (Th), scandium (Sc), titanium (Ti), vanadium (V), phosphorus (P), barium (Ba), europium (Eu), or combinations thereof.

Devices including at least one multilayer adhesion layer

Devices having an air bearing surfaces (ABS), the devices including a near field transducer (NFT) that includes a disc having a front edge; a peg, the peg having a front surface at the air bearing surface of the apparatus, an opposing back surface, a top surface that extends from the front surface to the back surface, two side surfaces that expend from the front surface to the back surface and a bottom surface that extends from the front surface to the back surface; and a barrier layer, the barrier layer separating at least the back surface of the peg from the disc and the barrier layer having a thickness from 10 nm to 50 nm.

Near field transducers (NFTS) including barrier layer and methods of forming

A magnetic sensor assembly includes first and second shields each comprised of a magnetic material. The first and second shields define a physical shield-to-shield spacing. A sensor stack is disposed between the first and second shields and includes a seed layer adjacent the first shield, a cap layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer. At least a portion of the seed layer and/or the cap layer comprises a magnetic material to provide an effective shield-to-shield spacing of the magnetic sensor assembly that is less than the physical shield-to-shield spacing.

Method for fabricating a magnetic sensor assembly

A near-field transducer includes an enlarged portion and a peg protruding from a first edge. The enlarged portion has a second edge facing away from the first edge. The near-field transducer includes a heat sink disposed on the enlarged portion and with an outline shape that matches that of the enlarged portion. The heat sink is disposed at a first separation distance from the first edge of the enlarged portion and a second, greater, separation distance from the second edge of the enlarged portion. The first separation distance is greater than the second separation distance.

Near-field transducer having enlarged portion matching outline shape of heat sink

Magnetic sensing device with reduced shield-to-shield spacing

A data sensor may be configured with a magnetic stack disposed between first and second magnetic shields. The magnetic stack can have a non-magnetic spacer layer disposed between first and second magnetically free laminations respectively coupled to the first and second magnetic shields via first and second electrode laminations. The first magnetically free lamination may have a first sub-layer constructed of a transition metal material and disposed between a second sub-layer constructed of a negative magnetostriction material and a third sub-layer constructed of a positive magnetostriction material.

Positive and negative magnetostriction ultrahigh linear density sensor

A read head includes a bottom shield and a bottom isolation layer that electrically isolates the bottom shield. The read head includes left and right reader stacks having respective bottom layers disposed on at least a portion of the bottom isolation layer. The left and right reader stacks are cross-track adjacent to one another. The read head also includes left and right bottom contacts electrically coupled to respective left and right bottom layers. A top shield is configured as a common top contact electrically coupled to respective top layers of the left and right reader stacks.

Read head with multiple reader stacks

Magnetic spin-torque memory cells, often referred to as magnetic tunnel junction cells, which have magnetic anisotropies (i.e., magnetization orientation at zero field and zero current) of the associated ferromagnetic layers aligned perpendicular to the wafer plane, or 'out-of-plane'. A memory cell may have a ferromagnetic free layer, a first pinned reference layer and a second pinned reference layer, each having a magnetic anisotropy perpendicular to the substrate. The free layer has a magnetization orientation perpendicular to the substrate that is switchable by spin torque from a first orientation to an opposite second orientation.

ST-RAM cells with perpendicular anisotropy

A later spin valve multi-reader includes at least two spin detectors, a spin injector and a spin diffusion medium. The spin diffusion medium bridges the spin detectors and the spin injector. Each of the spin detectors detects a unique spin accumulation signal.

Reader with at least two-spin detectors

A data reader may be configured at least with a magnetic stack that has a first magnetic layer separated from a second magnetic layer by a non-magnetic spacer layer. The first magnetic layer may have an areal extent on an air bearing surface (ABS) that differs from the second magnetic layer while the second magnetic layer can be configured with a first plurality of linear sidewalls that are each angled with respect to a second plurality of linear sidewalls of the first magnetic layer.

Magnetic stack with different areal extents on an air bearing surface

A data reader may be configured at least with detector and injector stacks that each has a common spin accumulation layer. The detector stack may positioned on an air bearing surface (ABS) while the injector stack is positioned distal the ABS. The injector stack can have a diffusive layer with a larger spin diffusion length than mean free path.

Injector stack with diffusive layer

A data reader may be configured at least with a magnetic stack positioned on an air bearing surface (ABS) and contacting a spin depolarizing layer that is a minority spin current carrier. The spin depolarizing layer can have a thickness and spin diffusion length corresponding to a net zero spin polarization at an interface of the magnetic stack and spin depolarizing layer.

Depolarizing layer in a magnetic stack

Flux-closed spin-transfer torque memory having a specular insulative spacer is disclosed. A flux-closed spin-transfer torque memory unit includes a multilayer free magnetic element including a first free magnetic layer anti-ferromagnetically coupled to a second free magnetic layer through an electrically insulating and electronically reflective layer. An electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic element from a reference magnetic layer.

Flux-closed STRAM with electronically reflective insulative spacer

Growing community of inventors

Edina, MN, United States of America

Dimitar Velikov Dimitrov