Nxp B.v.

Dimitar Milkov Dochev

Maarten Jacobus Swanenberg

Hermanus Johannes Effing

Arnold Benedictus Van Der Wal

A switching amplifier circuit () connected to drive an impedance-based output load () includes high side and low side switches (-) configured and connected to connect first and second supply voltage lines to first and second output nodes (ANTP, ANTN) in response to gating control signals, and also includes an output current sensing circuit for measuring a current through the output load with a current sensing resistor (Rs) connected between the second supply voltage line and a source of one or more split gate-source switching transistors (C) in the low side gate-source switching transistor, where a voltage sense circuit connected across the current sensing resistor is configured to sample a voltage across the current sensing resistor for measuring a sense current at the current sensing resistor.

Low cost LF driver current sense topology

Described herein is an N type extended drain transistor formed from a semiconductor on insulator (SOI) wafer. The transistor has a buried P type region formed by the selective implantation of P type dopants in a semiconductor layer of the wafer at a location directly below a drift region of the transistor. The transistor also includes a source located in a P well region and a drain. The buried P type region is in electrical contact with the P well region. The N type drift region, the source, and the drain are also located in a portion of the semiconductor layer surrounded by dielectric isolation. A buried dielectric layer located below the portion of the semiconductor layer electrically isolates the portion of the semiconductor layer from a semiconductor substrate located below the buried dielectric layer.

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Nijmegen, Netherlands

Dimitar Milkov Dochev