Wacker-chemitronic Gesellschaft Fur Elektronik-grundstoffe Mbh

Wacker-chemie Gmbh

Dietrich Schmidt

Johann Hofer

Heinz-Jorg Rath

Heinz Herzer

Winfried Lang

Dieter Regler

Bernhard Authier

Werner Zulehner

Jurgen Voss

Bruno Meissner

Heinz J Rath

Karl E Huber

Karl Erwin Huber

Rudolf Pachnek

Process for cementing semiconductor discs to a carrier plate for subsequent olishing, which comprises applying to the discs a cementing solution being composed of

Process for cementing semiconductor discs to carrier plates and product

A process for purifying solid substances by melting and subsequent resoliication, wherein a melted bath of the solid substance is formed, a roller is placed in the bath so that a first portion of its surface is in contact with the melted substance, and the surface of the roller is cooled to a temperature below the melting point of the solid substance. The cooled roller is rotated in the melted substance to collect a solidified film of the substance on the roller surface. A second portion of the roller surface is passed through a heated zone at a temperature above the melting point of the solid substance, so that the solidified film is remelted and collected in an appliance.

Process for purifying solid substances

A process for determining the effective doping agent content of hydrogen the production of semiconductors which comprises zone drawing a silicon rod of highest purity and having a known specific resistance, in the presence of hydrogen to be tested, subsequently redetermining the specific resistance of the silicon rod, and computing the concentration of the doping agent in the hydrogen used from the known relationship between the specific resistance and the amount of doping agent. By stepwise determination of the resistance along the longitudinal axis of the rod, the amount of doping agent built into the rod at different levels can thus be determined.

Process for determining the effective doping agent content of hydrogen

Process for the manufacture of silicon of large surface area bonded to a substrate, which comprises depositing silicon to a thickness of from 30 to 500 .mu.m onto panel-shaped substrates of glassy carbon (a glass-like carbon obtained by carbonizing a spatially cross-linked synthetic resin) that are heated by direct passage of an electric current to temperatures above the melting point of silicon, and thereafter cooling the silicon to a temperature below its melting point in the direction from its free surface toward the substrate. The invention also comprises the silicon panels so made which are especially useful in the manufacture of solar cells.

Process for the manufacture of silicon of large surface area bonded to a

An improved process for the production of pure, elemental semiconductor material, especially silicon, of the type wherein the semiconductor material is produced by decomposition from the gaseous phase, is provided, which includes the initial step of maintaining a melt of the semiconductor material at a temperature of up to a maximum of 200.degree. C above the melting point of the material. Thereafter, at least a gaseous, decomposable compound of the semiconductor material is introduced into the melt, under a pressure of about 0.01 to 30 bar, to produce a pure, elemental semiconductor material in liquid form.

Process for the production of pure, silicon elemental semiconductor

A process for making crucible-drawn silicon rods containing volatile doping gents, especially antimony, said rods having narrow resistance tolerances, which comprises drawing from a pre-doped silicon melt a monocrystalline rod while passing through the melt a current of inert gas either intermittently or continuously.

Process for producing crucible-drawn silicon rods containing volatile

Halogenosilanes and halogenogermanes which are contaminated by a boron-coining impurity are purified by treatment with an effective amount of a hydrated metal oxide or a hydrated silicate containing from about 3 to about 8% by weight of water, and then distilling the treated halogenosilane or halogenogermane at a temperature about 3.degree. to about 15.degree. C above its boiling temperature, and at atmosphere pressure.

Process for purifying halogenosilanes

Process for determining the donor content of polycrystalline silicon of high purity to be used in the semiconductor industries, the silicon having a known acceptor content of up to 0.02 atomic % and a donor content of up to 0.1 atomic %, the determination comprising the steps of introducing a test rod into a gas-tight quartz tube of only slightly larger internal diameter than the test rod, converting the rod into the oligocrystalline state by zone drawing with a seed crystal within a streaming protective gas, forming a melting zone in the test rod travelling vertically over the entire length, measuring the resistance of the so formed oligocrystalline test rod, and calculating the donor concentration from the measured resistance, the protective gas being a noble gas with an admixture of 10 - 800 ppm of oxygen.

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Burghausen, Germany

Dietrich Schmidt