Aixtron Ag

Dietmar Schmitz

Holger Jurgensen

Johannes Käppeler

Holger Jürgensen

Michael Heuken

Gerd Strauch

Oliver Schön

Gert Strauch

Harry Protzmann

A method for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate source is used for at least one part of the reaction gases. The invention is characterized in that, by means of a temperature control of the reaction gases between precursor source(s) and substrate, a condensation of the reaction gases before the substrate(s) is avoided.

Coating method

What is described here is a method and a temperature management and reaction chamber system for the production of nitrogenous semiconductor crystal materials of the form ABCNM, wherein A, B, C represent elements of group II or III, N represents nitrogen, M represents an element of group V or VI, and X, Y, Z, V, W represent the mol fraction of each element in this compound, operating on the basis of gas phase compositions and gas phase successions. The invention excels itself by the provisions that for the production of the semiconductor crystal materials the production process is controlled by the precise temperature control of defined positions in the reaction chamber system under predetermined conditions.

Method and system for semiconductor crystal production with temperature management

Growing community of inventors

Aachen, Germany

Dietmar Schmitz