Ict Integrated Circuit Testing Gesellschaft Für Halbleiterprüftechnik Mbh

Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh

Applied Materials, Inc.

Siemens Aktiengesellschaft

Other

Jeol Ltd.

Act Advanced Circuit Testing Gesellschaft Fur Testsystementwicklung Mbh

Act Advanced Circuit Testing Gesellschaft Fur

Ict Integrated Circuit Testing Gesellschaft F&uuml;r Halbleiterpruftechnik Mbh

Ict Integrated Circuit Testing Gesellschaft F&#xfc;r Halbletterpr&#xfc;ftechnik Mbh

Dieter Winkler

Juergen Frosien

Hans-Peter Feuerbaum

Benjamin John Cook

Pavel Adamec

Stefan Lanio

William J DeVore

Henry Thomas Pearce-Percy

Benyamin Buller

Helmut Banzhof

Ralf Degenhardt

Thomas Jasinski

Udo Weigel

Matthias Firnkes

Richard L Lozes

Harry Munack

Stefan Grimm

Xinrong Jiang

Jürgen Frosien

Jurgen Frosien

Steven Thomas Coyle

Joseph Bach

Gerald Schönecker

Birgit Schabinger

Hans Zimmermann

Bernd Wöllert

Matthias Brunner

Burkhard Lischke

Thomas Kemen

Ralf Schmid

Igor Petrov

Reinhold Schmitt

Guy Eytan

William A Eckes

Eugene Mirro

Roman Barday

Achim Göhl

Markus Thomann

Bernd Woellert

Dror Kella

Zvi Nir

Uli Hoffmann

A method of influencing a charged particle beam () propagating along an optical axis (A) is described. The method includes: guiding the charged particle beam () through at least one opening () of a multipole device () that comprises a first multipole () with four or more first electrodes () and a second multipole () with four or more second electrodes () arranged in the same sectional plane, the first electrodes and the second electrodes being arranged alternately around the at least one opening (); and at least one of exciting the first multipole to provide a first field distribution for influencing the charged particle beam in a first manner, and exciting the second multipole to provide a second field distribution for influencing the charged particle beam in a second manner. Further, a multipole device () with a first multipole () and a second multipole () provided on the same substrate as well as a charged particle beam apparatus () with a multipole device () are provided.

Method of influencing a charged particle beam, multipole device, and charged particle beam apparatus

A charged particle beam apparatus for inspecting a specimen with a plurality of beamlets is described. The charged particle beam apparatus includes a charged particle beam emitter () for generating a charged particle beam () propagating along an optical axis (A) and a multi-beamlet generation- and correction-assembly (), including a first multi-aperture electrode () with a first plurality of apertures for creating the plurality of beamlets from the charged particle beam, at least one second multi-aperture electrode () with a second plurality of apertures of varying diameters for the plurality of beamlets for providing a field curvature correction, and a plurality of multipoles () for individually influencing each of the plurality of beamlets, wherein the multi-beamlet generation- and correction-assembly () is configured to focus the plurality of beamlets to provide a plurality of intermediate beamlet crossovers. The charged particle beam apparatus further includes an objective lens () for focusing each of the plurality of beamlets to a separate location on the specimen, and a single transfer lens () for beamlet collimation arranged between the multi-beamlet generation- and correction-assembly and the objective lens. Further, a method of inspecting a specimen with a charged particle beam apparatus is described.

Charged particle beam apparatus, multi-beamlet assembly, and method of inspecting a specimen

A charged particle beam device for imaging and/or inspecting a sample is described. The charged particle beam device includes a beam emitter for emitting a primary charged particle beam; a retarding field device for retarding the primary beam before impinging on the sample, the retarding field device including an objective lens and a proxy electrode; and a first detector for off-axial backscattered particles between the proxy electrode and the objective lens. The charged particle beam device is adapted for guiding the primary beam along an optical axis to the sample for releasing signal particles. The proxy electrode includes one opening allowing a passage of the primary charged particle beam and of the signal particles, wherein the one opening is sized to allow a passage of charged particles backscattered from the sample at angles from 0&#xb0; to 20&#xb0; or above relative to the optical axis. Further, a method for imaging and/or inspecting a sample with a charged particle beam device is described.

Charged particle beam device and method for inspecting and/or imaging a sample

A charged particle gun for a charged particle beam device is described. The charged particle gun includes a gun housing; an emitter provided in the gun housing, the emitter being configured to emit a charged particle beam along an axis; an emitter power supply connected to the emitter; a trapping electrode provided in the gun housing, the trapping electrode at least partially surrounding the axis; a trapping power supply connected to the trapping electrode; and a shielding element shielding an electrostatic field of the trapping electrode from the axis during operation of the gun housing.

Method of operating a charged particle gun, charged particle gun, and charged particle beam device

A charged particle beam device for imaging and/or inspecting a sample is described. The charged particle beam device includes a beam emitter for emitting a primary charged particle beam, the charged particle beam device adapted for guiding the primary charged particle beam along an optical axis to the sample for releasing signal particles; a retarding field device for retarding the primary charged particle beam before impinging on the sample, the retarding field device including an objective lens and a proxy electrode, wherein the proxy electrode includes an opening allowing a passage of the primary charged particle beam and of the signal particles; a first detector for off-axial backscattered particles between the proxy electrode and the objective lens; and a pre-amplifier for amplifying a signal of the first detector, wherein the pre-amplifier is at least one of (i) integrated with the first detector, (ii) arranged adjacent to the first detector inside a vacuum housing of the charged particle beam device, and (iii) fixedly mounted in a vacuum chamber of the charged particle beam device. Further, a method for imaging and/or inspecting a sample with a charged particle beam device is described.

A charged particle beam device, comprising a charged particle source configured to emit a charged particle beam; a movable stage comprising an assembly of aperture arrays having at least a first aperture array and a second aperture array, the movable stage is configured to align the assembly of aperture arrays with the charged particle beam, and at least one aperture array comprises a shielding tube coupled to the movable stage.

Charged particle beam device, interchangeable multi-aperture arrangement for a charged particle beam device, and method for operating a charged particle beam device

A method of operating a charged particle gun is described. The method includes providing an emitter at a first emitter potential within the charged particle gun and providing a trapping electrode at a first electrode potential within the charged particle gun, wherein the first emitter potential and the first electrode potential is provided to have an electrical field of essentially zero at the emitter and at the trapping electrode; switching the trapping electrode from the first electrode potential to a second electrode potential different from the first electrode potential to generate an electrostatic trapping field at the trapping electrode; and after switching the trapping electrode from the first electrode potential to the second electrode potential, switching on an electrostatic emission field at the emitter.

A method of operating a charged particle beam device is disclosed, including passing each of a plurality of beamlets through a deflector and a scanner, in that order. Each of the beamlets is focused with an objective lens on a sample to form a plurality of focal spots, forming an array. A first beamlet is focused on a first spot and a second beamlet is focused on a second spot. In a centered configuration of the device, each of the plurality of beamlets is directed by the deflector toward a coma free point. In a beamlet-displaced configuration of the device, the scanner is scanned such that the first beamlet passes through an acceptable aberrations point, the first beamlet scanning a displaced first field of view; and the first spot is displaced from the regular first focal spot to a displaced first focal spot.

Device and method for operating a charged particle device with multiple beamlets

A multi-beam charged particle beam device is described. The multi-beam charged particle beam device includes a charged particle source configured to emit a primary charged particle beam; an aperture arrangement having openings configured to generate at least a first beamlet and a second beamlet of the primary charged particle beam; and a blanking device, the blanking device includes at least a first blanking deflector for the first beamlet and a second blanking deflector for the second beamlet; and a shield assembly having a first shielding element partially or fully surrounding the first blanking deflector.

Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device

A charged particle beam dump for a charged particle beam device is described. The beam dump includes an annular shaped body having an inner perimeter wall that defines an open annulus for passing of primary charged particle beamlets, the annular shaped body further having an outer perimeter wall and a bottom wall; and an annular shaped electrode provided partially above the annular shaped body having an inner perimeter side and an outer perimeter side, wherein the inner perimeter side is outside of the radius of the inner perimeter wall of the annular shaped body.

A charged particle beam device is described, which includes: a beam source configured to generate a charged particle beam propagating along an optical axis (A); an aperture device with a first number of apertures configured to create a first number of beamlets from the charged particle beam, wherein the first number is five or more, wherein the apertures are arranged on a ring line around the optical axis (A) such that perpendiculars of the apertures onto a tangent of the ring line are evenly spaced. The charged particle beam device further includes an electrostatic multipole device configured to individually influence the beamlets. Further, a charged particle beam influencing device and a method of operating a charged particle beam device are described.

Charged particle beam device, charged particle beam influencing device, and method of operating a charged particle beam device

A method of imaging a secondary charged particle beam emanating from a sample by impingement of a primary charged particle beam is provided. The method includes setting a first operating parameter to a first value. The first operating parameter is selected from a group including: landing energy of the primary charged particle beam on the sample, extraction field strength for the secondary charged particle beam at the sample, magnetic field strength of an objective lens that focuses the primary charged particle beam onto the sample, and working distance of the objective lens from the sample. The method further includes controlling, while the first operating parameter is set to the first value, the excitation of a first lens and of a second lens to map the secondary charged particle beam onto a first region on an aperture plate. The first region overlaps with a first opening of the aperture plate and with a second opening of the aperture plate. The method further includes setting the first operating parameter to a second value different from the first value. The method further includes controlling, while the first operating parameter is set to the second value, the excitation of the first lens and of the second lens to map the secondary charged particle beam onto the first region on the aperture plate.

System and method for imaging a secondary charged particle beam with adaptive secondary charged particle optics

A secondary charged particle imaging system for imaging a secondary charged particle beam emanating from a sample by impingement of a primary charged particle beam is provided. The system includes a detector arrangement, and an adaptive secondary charged particle optics. The detector arrangement comprises a first detection element for detecting a first secondary charged particle sub-beam of the secondary charged particle beam, and a second detection element for detecting a second secondary charged particle sub-beam of the secondary charged particle beam. The adaptive secondary charged particle optics comprises an aperture plate including a first opening for letting the first secondary charged particle sub-beam pass through and a second opening for letting the second secondary charged particle sub-beam pass through; a lens system for mapping the secondary charged particle beam onto the aperture plate, the lens system comprising a first lens and a second lens; and a controller for controlling the excitation of the first lens and the excitation of the second lens. The controller is configured to independently control the excitation of the first lens and of the second lens to map the secondary charged particle beam onto the aperture plate so that the first secondary charged particle sub-beam passes through the first opening and the second secondary charged particle sub-beam passes through the second opening independent of a variation of at least one first operating parameter selected from a group comprising: landing energy of the primary charged particle beam on the sample, extraction field strength for the secondary charged particle beam at the sample, magnetic field strength of an objective lens that focuses the primary charged particle beam onto the sample, and working distance of the objective lens from the sample.

System for imaging a secondary charged particle beam with adaptive secondary charged particle optics

An electrostatic multipole device for influencing a charged particle beam propagating along an optical axis is described. The electrostatic multipole device comprises a substrate with at least one aperture opening for the charged particle beam, which extends along the optical axis through the substrate, and four or more electrodes which are formed on a first main surface of the substrate to influence the charged particle beam propagating through the aperture opening, wherein each of the four or more electrodes is arranged at a radial distance from a beam limiting edge of the aperture opening. Further, a method of manufacturing an electrostatic multipole device is described.

Electrostatic multipole device, electrostatic multipole arrangement, and method of manufacturing an electrostatic multipole device

An electrostatic multipole device for influencing a charged particle beam propagating along an optical axis is described. The multipole device includes a first electrical contact, a second electrical contact, and a high-resistance layer which extends at least partially around the optical axis and is configured to allow a current flow between the first electrical contact and the second electrical contact, wherein the first electrical contact contacts the high-resistance layer at a first circumferential position and is configured to provide a first potential to the first circumferential position, and wherein the second electrical contact contacts the high-resistance layer at a second circumferential position at an angular distance from the first circumferential position and is configured to provide a second potential to the second circumferential position. Further, an electrostatic multipole arrangement including two or more such multipole devices and a charged particle beam device are described.

Electrostatic multipole device, electrostatic multipole arrangement, charged particle beam device, and method of manufacturing an electrostatic multipole device

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Munich, Germany

Dieter Winkler