Heliotronic Forschungs- Und Entwicklungsgesellschaft Fur

Wacker-chemie Gmbh

Wacker-chemitronic Gesellschaft Fur Elektronik-grundstoffe Mbh

Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag

Other

Dieter Seifert

Josef Dietl

Erhard Sirtl

Erich Bildl

Herbert Pichler

Heinz Kraus

Hanns Wochner

Dieter Regler

Alfred Moritz

Theresia Bauer

Cord Gessert

Walter Berger

Werner Ott

Rolf Baueregger

Bernd Sauter

Wilhelm Schmidbauer

Susanne Weizbauer

Klemens Muehlbauer

August Freudlsperger

Volker Ofenmacher

Hermann Dicker

Rolf Bauregger

Rudolf Rothlehner

Semiconductor material has a low metal concentration at the surface. The semiconductor material has an iron content and/or chromium content on the surface of less than 6.66&times;10,g/cm,. A method for producing this semiconductor material includes a preliminary cleaning, a main cleaning and hydrophilization. A device for use in this method has a container with pyramid-shaped recesses at the bottom.

Method for producing a semiconductor material

A bandsaw for cutting off slices from a workpiece includes a sawband which circulates over a system of pulleys and has a band back and a cutting edge, which is situated opposite to the band back and is provided with a cutting surface. There is also a feed system, which effects a relative movement between the workpiece and the cutting edge, so that the sawband penetrates into the workpiece, thus forming a cutting gap. The bandsaw has a support plate, which supports the band back and is held by a holding device. There is also a process for cutting off slices from a workpiece using this bandsaw. A part of the support plate, which part adjoins the band back, also penetrates into the cutting gap during the cutting of the workpiece.

Bandsaw and process for cutting off slices from a workpiece

A carrier for a semiconductor wafer has at least three protrusions on which he edge of the semiconductor wafer is supported so that the semiconductor wafer is positioned essentially horizontal. The carrier does not make contact with the front side and the rear side of the semiconductor wafer. The protrusions are shaped so that the edge of the semiconductor wafer is supported exclusively below an imaginary central plane in the center between the front side and the rear side of the semiconductor wafer. The carrier is preferably used in the treatment of semiconductor wafers at temperatures of at least 200.degree. C.

Carrier for a semiconductor wafer and use of the carrier

Mounting for carrier bodies in an apparatus for the deposition of semiconductor material on heated carrier bodies, having a fixed current leadthrough passed through the base plate of the deposition apparatus, an electrode holder, and a graphite electrode. There is also at least one spring element which is disposed between the current leadthrough and the electrode holder, which permits a movement of the electrode holder relative to the current leadthrough and which cushions this movement.

Mounting for carrier bodies in an apparatus for the deposition of

The precise cutting of thin wafers from blocks or rods of hard and brittle material by means of ribbon or wire saws requires a very high strength of the sawing ribbon material or sawing wire material. In the method according to the invention, seamless metal rings are cold-rolled to form ribbon loops, optionally divided to form narrower ribbon loops or to form wire loops and optionally provided with a cutting coating. In this way, extremely strong cutting tools can be obtained.

Method and device for producing seamless ribbon and wire loops, and

A novel material can be obtained by chemical reaction from elemental or alloyed silicon powder, to which fillers are optionally added. The novel material, which can be worked mechanically, can be further refined by means of subsequent heat treatment and/or surface coating, and can in many cases be used instead of polycrystalline or sintered silicon.

Material comprising silicon and process for its manufacture

A process for the purification of silicon by the action of one or several acids, wherein silicon is established as a stationary phase and one or several acids are caused to form mobile phases for traversing the stationary phase under pressure and absorbing the impurities from the silicon during the passage, leaving behind the silicon with a higher degree of purity.

Process for the purification of silicon by the action of an acid

This invention concerns a tracking device which enables the positioning of an apparatus to trace a curved path. For example, they are suitable for solar devices such as photovoltaic generators, solar cookers and heliostates. Normally the tracking apparatus is mounted on a vertical axis, whereas according to the invention a necessary tilt to the horizontal axis is attained automatically through a directing limb by rotating the vertical axis, this making possible a trustworthy and uncomplicated manufacturable and manageable tracking device that can be easily adjusted to the local circumstances.

Tracking device

The invention relates to a process for the direct manufacture of semiconductor wafers, wherein the semiconductor wafers are obtained from molten semiconductor material by providing an area of the surface of the semiconductor melt that corresponds approximately to the size of the wafer with at least one seed crystal, by allowing this area of the surface to cool until it solidifies, the cooling being brought about at least substantially by loss of heat by radiation, and finally, by removing the crystallized-out wafer from the surface. If elemental silicon is used as the semiconductor material, wafers that are suitable for further processing to form solar cells are obtained.

Process for the manufacture of semiconductor wafers

Apparatus for machining workpieces by abrasion by means of an oscillating ltiple-blade tool, which is moved across the workpiece. The moved masses define an oscillatory system, as a result of which the energy can be stored in the reversal ranges by a buffer system. This apparatus, especially when designed as a lap-cutting machine for cutting semiconductor rods, is preferably driven by the oscillation of the masses to be moved, and is driven in the resonance range. The tool carriages are buffer loaded at each end and are oscillated at or near the natural resonance frequency of the moving masses.

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Neuotting, Germany

Dieter Seifert