Asm IP Holding B.v.

Asm International N.v.

Dieter Pierreux

Bert Jongbloed

Werner Knaepen

Jan Willem Maes

Viljami J Pore

David Kurt De Roest

Gido Van Der Star

Steven Van Aerde

Kelly Houben

Qi Xie

Tom E Blomberg

Hessel Sprey

Toshiya Suzuki

Raija H Matero

Lucian C Jdira

Steven R A Van Aerde

Linda Lindroos

Kees Van Der Jeugd

Lucia D'Urzo

Hideaki Fukuda

Vladimir Machkaoutsan

Theodorus G M Oosterlaken

Cornelius A Van Der Jeugd

Krzysztof Kamil Kachel

Suvi P Haukka

Eva E Tois

Charles Dezelah

Herbert Terhorst

Giuseppe Alessio Verni

Ren-Jie Chang

Maarten Stokhof

Radko G Bankras

Panagiota Arnou

Pia Homm Jara

Cornelis Thaddeus Herbschleb

Robert Huggare

Wilco A Verweij

Wilco Verweij

Eric James Shero

Atsuki Fukazawa

Petri Raisanen

Kunitoshi Namba

Joe Margetis

Rami Khazaka

Yosuke Kimura

David Kohen

Krzysztof Kachel

Wataru Adachi

Caleb Miskin

Theodorus Oosterlaken

Jeroen Fluit

Amir Kajbafvala

Chris De Ridder

Peter Westrom

Pauline Calka

Peter Marc Zagwijn

Robin Roelofs

Xin Sun

Atsuki Fukuzawa

Marinus Josephus De Blank

Anna Trovato

Omar Elleuch

Frederick Aryeetey

Methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.

Method of forming a vanadium nitride-containing layer

The disclosure relates to a substrate processing apparatus, comprising: a first reactor constructed and arranged to process a rack with a plurality of substrates therein; a second reactor constructed and arranged to process a substrate; and, a substrate transfer device constructed and arranged to transfer substrates to and from the first and second reactor. The second reactor may be provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of at least a substrate in the second reactor.

Substrate processing apparatus and method for processing substrates

A method and a wafer processing furnace for forming an epitaxial stack on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing plurality of substrates to a process chamber. A plurality of deposition cycles are executed, thereby forming the epitaxial stack on the plurality of substrates. The epitaxial comprises a plurality of epitaxial pairs, each pair comprising a first epitaxial layer and a second epitaxial layer. The deposition cycle comprises a first deposition pulse and a second deposition pulse. The first deposition pulse comprises a provision of a first reaction gas mixture to the process chamber, thereby forming the first epitaxial layer and the second deposition pulse comprises a provision of a second reaction gas mixture to the process chamber, thereby forming the second epitaxial layer.

Method and wafer processing furnace for forming an epitaxial stack of semiconductor epitaxial layers on a plurality of substrates

A method and a wafer processing furnace for forming an epitaxial stack on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing the plurality of substrates to a process chamber. A plurality of deposition cycles is executed, thereby forming the epitaxial stack on the plurality of substrates. The epitaxial stack comprises a plurality of epitaxial pairs, wherein the epitaxial pairs each comprises a first epitaxial layer and a second epitaxial layer, the second epitaxial layer being different from the first epitaxial layer. Each deposition cycle comprises a first deposition pulse and a second deposition pulse. The first deposition pulse comprises a provision of a first reaction gas mixture to the process chamber, thereby forming the first epitaxial layer. The second deposition pulse comprises a provision of a second reaction gas mixture to the process chamber, thereby forming the second epitaxial layer. The first deposition pulse or the second deposition pulse further comprises a provision of a dopant precursor gas to the process chamber.

Method and wafer processing furnace for forming an epitaxial stack on a plurality of substrates

A method may comprise disposing vanadium tetrachloride in a delivery vessel; delivering the vanadium tetrachloride to a reaction chamber in fluid communication with the delivery vessel; mitigating the delivery of decomposition products of the vanadium tetrachloride to the reaction chamber; and/or applying the vanadium tetrachloride to a substrate disposed in the reaction chamber to form a layer comprising vanadium on the substrate.

Methods and systems for delivery of vanadium compounds

A chemical vapor deposition furnace for depositing silicon nitride films is disclosed. The furnace includes a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector inside the process chamber is provided with vertically spaced gas injection holes to provide gas introduced at a feed end in an interior of the process gas injector to the process chamber. A valve system connected to the feed end of the process gas injector is being constructed and arranged to connect a source of a silicon precursor and a nitrogen precursor to the feed end for depositing silicon nitride layers. The valve system may connect the feed end of the process gas injector to a cleaning gas system to provide a cleaning gas to remove silicon nitride from the process gas injector and/or the process chamber.

Chemical vapor deposition furnace with a cleaning gas system to provide a cleaning gas

A method for forming a structure with a hole on a substrate is disclosed. The method may comprise: depositing a first structure on the substrate; etching a first part of the hole in the first structure; depositing a plug fill in the first part of the hole; depositing a second structure on top of the first structure; etching a second part of the hole substantially aligned with the first part of the hole in the second structure; and, etching the plug fill of the first part of the hole and thereby opening up the hole by dry etching. In this way 3-D NAND device may be provided.

Method for forming a structure with a hole

A sequential infiltration synthesis apparatus comprising:

Sequential infiltration synthesis apparatus and a method of forming a patterned structure

Methods and systems for forming structures including one or more layers comprising silicon germanium and one or more layers comprising silicon are disclosed. Exemplary methods can include using a surfactant, using particular precursors, and/or using a transition step to improve an interface between adjacent layers comprising silicon germanium and comprising silicon.

Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods

There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

Method and apparatus for filling a gap

Methods of forming a vanadium nitride-containing layer comprise providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber.

Method of forming vanadium nitride-containing layer

Disclosed are methods and systems for depositing layers comprising vanadium, nitrogen, and element selected from the list consisting of molybdenum, tantalum, niobium, aluminum, and silicon. The layers are deposited onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element

A method for forming layers with silicon is disclosed. The layers may be created by positioning a substrate within a processing chamber, heating the substrate to a first temperature between 300 and 500&#xb0; C. and introducing a first precursor into the processing chamber to deposit a first layer. The substrate may be heated to a second temperature between 400 and 600&#xb0; C.; and, a second precursor may be introduced into the processing chamber to deposit a second layer. The first and second precursor may comprise silicon atoms and the first precursor may have more silicon atoms per molecule than the second precursor.

Method for forming a layer provided with silicon

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Dilbeek, Belgium

Dieter Pierreux