Basf Se Corporation

Basf Aktiengesellschaft

Badische Anilin- & Soda-Fabrik Aktiengesellschaft

Dieter Mayer

Charlotte Emnet

Marco Arnold

Cornelia Roeger-Goepfert

Roman Benedikt Raether

Alexander Fluegel

Herbert Motz

Eberhard Koester

Alexandra Haag

Paul Deigner

Dieter Schaefer

Werner Grau

Roland Falk

Marcel Patrik Kienle

Peter Felleisen

Karl Uhl

Hans-Joerg Hartmann

Nadine Engelhardt

Roland Koenig

Eckhart Kneller

Lucas Benjamin Henderson

Sophia Ebert

Andreas Klipp

Guenter Scherr

Joachim Hack

Peter Heilmann

Michael Siemer

Helmut Kopke

Miran Yu

Friedrich Domas

Werner Huebner

Hubert Fehrenbach

Kurt Zwintzscher

Karl Hauck

Job Werner Hartmann

Udo Kullmann

Nicole Meier

Herbert Wagner

Harald Hoerhammer

Ursula Klein

Christine Guttner

Sathana Kitayaporn

Madhura Shreekar Pawar

Cornelia Röger-Göpfert

Harald HÖRHAMMER

Alexander FLÜGEL

The present invention relates to a resin composition, comprising (a) an epoxy resin; (b) a curing agent comprising the structure of formula C1; (c) an inorganic filler; wherein Ris (a) a siloxane group of formula C1a or (b) or both a siloxane group of formula C1a and an ester group of formula C1b; Ris selected from a bulky Cto Calkyl group comprising at least one tertiary or quaternary carbon atom; R, R, Rare independently selected from methyl, ethyl and 1-propyl; Ris selected from a linear or branched Cto Calkyl; Xis selected from a divalent Cto Calkanediyl group; and n is an average number of repeating units and is from 1.05 to 200.

Epoxy resin composition

Described herein is a composition including metal ions consisting essentially of cobalt ions, and a specific monomeric and polymeric suppressing agent including a carboxylic, sulfonic, sulfinic, phosphonic, or phosphinic acid functional groups which show a suppressing effect that is required for void-free bottom-up filling of nanometer-sized recessed features.

Composition for cobalt plating comprising additive for void-free submicron feature filling

The invention relates to a polyamine-based or polyhydric alcohol-based suppressing agent. The suppressing agent is modified by reaction with a compound that introduces a branching group into the suppressing agent before they are reacted with an alkylene oxide. The suppressing agent shows extraordinary superfilling properties, particularly when used to fill in features having extremely small aperture sizes and/or high aspect ratios.

Composition for metal plating comprising suppressing agent for void free filing

A method of detecting space debris includes: generating a virtual space debris in accordance with the law of conservation of mass by applying a debris breakup model to an object of breakup origin; calculating an orbit of each virtual space debris based on a debris orbit propagation model; and generating appearance frequency distribution of a motion vector of each virtual space debris on the celestial sphere based on the orbit calculation. The above operations are executed multiple times. The method further includes setting a search range vector based on a motion vector having a high level of the appearance frequency distribution of the motion vector, and applying a stacking method to regions in images captured at time intervals during the fixed point observation, the regions being shifted along the search range vector sequentially in the order of capture, thereby detecting space debris appearing on the images.

Composition for metal electroplating comprising leveling agent

A composition for metal plating comprising a source of metal ions and at least one leveling agent comprising at least one polyaminoamide comprising a polymer fragment of formula (I) or derivatives thereof obtainable by complete or partial protonation or N-quarternisation. 

A cobalt electrodeposition composition comprising cobalt ions, and particular leveling agents comprising X&#x2014;CO&#x2014;O&#x2014;R, X&#x2014;SO&#x2014;O&#x2014;R, X&#x2014;PO(OR), X&#x2014;SO&#x2014;O&#x2014;Rfunctional groups, wherein Xis a divalent group selected from (i) a chemical bond (ii) aryl, (iii) Cto Calkandiyl, which may be interrupted by O atoms, (iv) an arylalkyl group &#x2014;X&#x2014;X&#x2014;, (v) an alkylaryl group &#x2014;X&#x2014;X&#x2014;, and (vi) &#x2014;(O&#x2014;CHR)O&#x2014;, Ris selected from H and Cto Calkyl. Ris selected from H and Cto Calkyl, Xis a divalent aryl group, Xis a divalent Cto Calkandiyl group.

Composition for cobalt electroplating comprising leveling agent

According to the present invention a composition is provided comprising at least one source of metal ions and at least one additive obtainable by reacting a) a polyhydric alcohol condensate compound derived from at least one polyalcohol of formula (I)X(OH)&#x2003;&#x2003;(I)by condensation with b) at least one alkylene oxide to form a polyhydric alcohol condensate comprising polyoxyalkylene side chains, wherein n is an integer from 3 to 6 and X is an n-valent linear or branched aliphatic or cycloaliphatic radical having from 2 to 10 carbon atoms, which may be substituted or unsubstituted.

Composition for metal plating comprising suppressing agent for void free submicron feature filling

A composition comprising a source of metal ions and at least one additive comprising a polyalkyleneimine backbone, said polyalkyleneimine backbone having a molecular weight Mw of from 300 g/mol to 1000000 g/mol, wherein the N hydrogen atoms in the backbone are substituted by a polyoxyalkylene radical and wherein the average number of oxyalkylene units in said polyoxyalkylene radical is from 1.5 to 10 per N&#x2014;H unit.

A composition comprising a source of metal ions and at least one additive comprising at least one polyaminoamide, said polyaminoamide comprising the structural unit represented by formula I or derivatives of the polyaminoamide of formula I obtainable by complete or partial protonation, N-functionalization or N-quaternization with a non-aromatic reactant,wherein

A composition comprising a source of metal ions and at least one leveling agent comprising a linear or branched, polymeric imidazolium compound comprising the structural unit of formula L1 (L1) wherein R, R, Rare each independently selected from an H atom and an organic radical having from 1 to 20 carbon atoms, R4 is a divalent, trivalent or mutlivalent organic radical which does not comprise a hydroxyl group in the a or &#x3b2; position relative to the nitrogen atom of the imidazole rings is an integer. 

A composition comprising a source of metal ions and at least one polyaminoamide, said polyaminoamide comprising amide and amine functional groups in the polymeric backbone and aromatic moieties attached to or located within said polymeric backbone.

Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features

A composition comprising at least one source of metal ions and at least one additive obtainable by reacting a polyhydric alcohol comprising at least 5 hydroxyl functional groups with at least a first alkylene oxide and a second alkylene oxide from a mixture of the first alkylene oxide and the second alkylene oxide or a third alkylene oxide, a second alkylene oxide, and a first alkylene oxide in aforesaid sequence, the third alkylene oxide having a longer alkyl chain than the second alkylene oxide and the second alkylene oxide having a longer alkyl chain than the first alkylene oxide.

A composition comprising a source of metal ions and at least one additive comprising at least one polyaminoamide represented by formula (I) or derivatives of a polyaminoamide of formula (I) obtainable by complete or partial protonation, N-quarternisation or acylation. 

The use of surfactants A, the 1% by weight aqueous solutions of which exhibit a static surface tension &#x3c;25 mN/m, the said surfactants A containing at least three short-chain perfluorinated groups Rf selected from the group consisting of trifluoromethyl, pentafluoroethyl, 1-heptafluoropropyl, 2-heptafluoropropyl, heptafluoroisopropyl, and pentafluorosulfanyl; for manufacturing integrated circuits comprising patterns having line-space dimensions below 50 nm and aspect ratios &#x3e;3; and a photolithographic process making use of the surfactants A in immersion photoresist layers, photoresist layers exposed to actinic radiation, developer solutions for the exposed photoresist layers and/or in chemical rinse solutions for developed patterned photoresists comprising patterns having line-space dimensions below 50 nm and aspect ratios &#x3e;3. By way of the surfactants A, pattern collapse is prevented, line edge roughness is reduced, watermark defects are prevented and removed and defects are reduced by removing particles.

Use of surfactants having at least three short-chain perfluorinated groups RF for manufacturing integrated circuits having patterns with line-space dimensions below 50 NM

A composition comprising a source of metal ions and at least one leveling agent obtainable by condensing at least one trialkanolamine of the general formula N(R&#x2014;OH)(Ia) and/or at least one dialkanolamine of the general formula R&#x2014;N(R&#x2014;OH)(Ib) to give a polyalkanolamine(II), wherein the Rradicals are each independently selected from a divalent, linear or branched aliphatic hydrocarbon radical having from 2 to 6 carbon atoms, and the Rradicals are each selected from hydrogen and linear or branched aliphatic, cycloaliphatic and aromatic hydrocarbon radicals having from 1 to 30 carbon atoms, or derivatives obtainable by alkoxylation, substitution or alkoxylation and substitution of said polyalkanolamine(II).

Growing community of inventors

Ludwigshafen, Germany

Dieter Mayer