Siltronic Ag

Crystal Growing Systems Gmbh

Dieter Knerer

Andreas Huber

Erich Tomzig

Ulrich Lambert

Friedrich Passek

Burkhard Altekrüger

Axel Vonhoff

Werner Schachinger

Stefan Henkel

Walter Heuwieser

Masamichi Ookubo

Patrick Eschenbacher-Bladt

Ulf Gattermann

Single crystal semiconductor wafers comprise oxygen and an n-type dopant, and are produced by a process comprising providing a silicon melt containing n-type dopant in a quartz crucible, the melt having an initial height hM;

Method for producing a semiconductor wafer of monocrystalline silicon, device for producing a semiconductor wafer of monocrystalline silicon and semiconductor wafer of monocrystalline

A ring-shaped resistance heater for supplying heat to a growing single crystal, contains an upper and a lower ring, which are electrically conductively connected by means of a loop adjacent to a ring gap of one ring, such that the flow direction of electric current which is conducted through the rings is opposite in the rings; connecting elements which hold the upper and lower rings together in a spaced apart relationship; and current leads for conducting electric current through the upper and lower rings.

Ring-shaped resistance heater for supplying heat to a growing single crystal

A pulling apparatus and a method with which especially heavy crystals () can be pulled using the Czochralski method utilizing the pulling apparatus. For this purpose the neck () of the crystal () has an enlargement () beneath which extends the support device. This device includes latches (), which are moved from a resting position into an operating position in which the latches () extend beneath the enlargement (). Each latch () is supported on the base body such that it is swivellable about a pivot axis () and can assume two stable positions, namely the resting position and the operating position. Each of these positions is defined by a stop on the base body. When the latch rests on the one stop, its center of gravity, viewed from the neck (), is located on the other side of the pivot axis (). When the latch rests on the other stop, the center of gravity is located on this side of the pivot axis (). The actuation of the latches () takes place with actuation means disposed stationarily in the apparatus.

Crystal pulling apparatus and method for the production of heavy crystals

Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cmto 0.1/cmand occupy overall an areal proportion of 10% to 100% of the planar area of the semiconductor wafer, wherein the remaining regions of the semiconductor wafer have a significantly higher defect density than the defect-reduced regions. The wafers may be produced by a method for annealing GOI relevant defects in the wafer, by irradiating defined regions of a side of the semiconductor wafer by laser wherein each location is irradiated with a power density of 1 GW/mto 10 GW/mfor at least 25 ms, wherein the laser emits radiation of a wavelength above the absorption edge of the wafer semiconductor material and wherein the temperature of the wafer rises by less than 20 K as a result of irradiation.

Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it

An apparatus for supporting a single crystal during Czochralski crystal pulling below a thickened crystal neck has lower bearing surface(s) with a central opening inscribable with a horizontal circle of diameter D, centered on a vertical axis, the bearing surface(s) connected by connecting element(s) to minimally one securing element for securing to a crystal pulling lifting device, the connecting elements arranged to provide a clear-space in the region above the bearing surface(s) in which a circle of diameter Dcentered on the vertical axis (D&#x3e;D) is inscribable over a length of the vertical axis. The unitary apparatus is useful for crystal ingot growth by immersion into the semiconductor melt prior to growth of a Dash neck and a thickening of the Dash neck. The apparatus is then raised to support the crystal by bearing against the bottom of the thickening.

Supporting apparatus for supporting a growing single crystal of semiconductor material, and process for producing a single crystal

Growing community of inventors

Burghausen, Germany

Dieter Knerer