Siltronic Ag

Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag

Dieter Gräf

Reinhold Wahlich

Wilfried Von Ammon

Erich Dornberger

Alfred Miller

Hans Olkrug

Markus Blietz

Dirk Zemke

An SOI wafer is constructed from a carrier wafer and a monocrystalline silicon layer having a thickness of less than 500 nm, an excess of interstitial silicon atoms prevailing in the entire volume of the silicon layer. The SOI wafers may be prepared by Czochralski silicon single crystal growth, the condition v/G&#x3c;(v/G)=1.3&#xd7;10cm/(K&#xb7;min) being fulfilled at the crystallization front over the entire crystal cross section, with the result that an excess of interstitial silicon atoms prevails in the silicon single crystal produced; separation of at least one donor wafer from this silicon single crystal, bonding of the donor wafer to a carrier wafer, and reduction of the thickness of the donor wafer, with the result that a silicon layer having a thickness of less than 500 nm bonded to the carrier wafer remains.

SOI wafer and method for producing it

A method for producing a silicon monocrystal has a growing monocrystal kept for a specified dwell time in the specified temperature range of from 850.degree. C. to 1100.degree. C. This dwell time for the growing monocrystal in the chosen temperature range is either greater than 250 min or less than 80 min. A device and a method, in which the cooling rate of the growing monocrystal is to be influenced, has a heat shield which is subdivided into adjacent annular zones between a lower rim and an upper rim. These adjacent zones differ in regard to each's thermal conduction and transparency to heat radiation.

Method and device for producing monocrystals

Growing community of inventors

Burghausen, Germany

Dieter Gräf