Siltronic Ag

Wacker-chemitronic Gesellschaft Fur Elektronik-grundstoffe Mbh

Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag

Dieter Graef

Reinhold Wahlich

Wilfried Von Ammon

Peter John

Laszlo Fabry

Ulrich Lambert

Alfred Miller

Manfred Grundner

Peter Krottenthaler

Markus Blietz

Susanne Bauer-Mayer

Dirk Zemke

An SOI wafer is constructed from a carrier wafer and a monocrystalline silicon layer having a thickness of less than 500 nm, an excess of interstitial silicon atoms prevailing in the entire volume of the silicon layer. The SOI wafers may be prepared by Czochralski silicon single crystal growth, the condition v/G&#x3c;(v/G)=1.3&#xd7;10cm/(K&#xb7;min) being fulfilled at the crystallization front over the entire crystal cross section, with the result that an excess of interstitial silicon atoms prevails in the silicon single crystal produced; separation of at least one donor wafer from this silicon single crystal, bonding of the donor wafer to a carrier wafer, and reduction of the thickness of the donor wafer, with the result that a silicon layer having a thickness of less than 500 nm bonded to the carrier wafer remains.

SOI wafer and method for producing it

A process for producing silicon wafers with low defect density is one wherein a) a silicon single crystal having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 is produced by molten material being solidified to form a single crystal and is then cooled, and the holding time of the single crystal during cooling in the temperature range of from 850.degree. C. to 1100.degree. C. is less than 80 minutes; b) the single crystal is processed to form silicon wafers; and c) the silicon wafers are annealed at a temperature of at least 1000.degree. C. for at least one hour. Also, it is possible to prepare a silicon single crystal based upon having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 and a nitrogen doping concentration of at least 1*10.sup.14 /cm.sup.3 for (a) above.

Process for producing silicon semiconductor wafers with low defect

A process for producing silicon wafers which have a storage-stable surface and which can be thermally oxidized directly, that is to say, without a prior HF immersion bath, and without the addition of halogen-containing gases, it being possible to achieve an equal or better oxidation result than that achieved by including these measures.

Process for producing storage-stable silicon wafer surfaces having

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Burghausen, Germany

Dieter Graef