Osram Opto Semiconductors Gmbh

Osram Opto Semiconductor Gmbh

Dieter Eissler

Berthold Hahn

Siegfried Herrmann

Ralph Wirth

Herbert Brunner

Volker Härle

Stefan Illek

Günter Waitl

Andreas Ploessl

Alexander Heindl

Patrick Rode

Ewald Karl Michael Guenther

Gertrud Kräuter

Harald Jäger

Magnus Ahlstedt

Helmut Fischer

Robert Walter

Mikael Ahlstedt

Vincent Grolier

A radiation-emitting semi-conductor chip has a substrate and a semiconductor body arranged on the substrate and with a semiconductor layer sequence that includes an active region provided for producing radiation, an n-type region, and a covering layer arranged on a side of the n-type region that faces away from said active region. There is a contact structure arranged on the covering layer for the external electrical contacting of the n-type region. The covering layer has at least one recess through which the contact structure extends to the n-type region.

Radiation-emitting semiconductor chip and method for producing a radiation-emitting semiconductor chip

Disclosed is an optoelectronic component () comprising a semiconductor function region () with an active zone () and a lateral main direction of extension, said semiconductor function region including at least one opening () through the active zone, and there being disposed in the region of the opening a connecting conductor material () that is electrically isolated () from the active zone in at least in a subregion of the opening. Further disclosed are a method for producing such an optoelectronic component and a device comprising a plurality of optoelectronic components. The component and the device can be produced entirely on-wafer.

Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component

A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side, and two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body.

Light-emitting diode comprising a carrier body, a mirror layer, and two contact layers

An optoelectronic module includes a layer structure having a plurality of semiconductor layers including a substrate layer, a first layer arrangement and a second layer arrangement, wherein 1) the first layer arrangement has a light-emitting layer arranged on the substrate layer, 2) the second layer arrangement contains at least one circuit that controls an operating state of the light-emitting layer, and 3) the second layer arrangement is arranged on the substrate layer and/or surrounded by the substrate layer.

Optoelectronic module

An optoelectronic semiconductor component comprising a semiconductor body () and a current spreading layer () is specified. The current spreading layer () is applied to the semiconductor body () at least in places. In this case, the current spreading layer () contains a metal () that forms a transparent electrically conductive metal oxide () in the current spreading layer, and the concentration (x) of the metal () decreases from that side of the current spreading layer () which faces the semiconductor body () toward that side of said current spreading layer which is remote from the semiconductor body (). A method for producing such a semiconductor component is also disclosed.

Optoelectronic semiconductor component with current spreading layer

An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are electrically connected to the active region. The contacts each have a connecting face that faces away from the semiconductor body. The contact faces are located on a connection side of the component and a side of the component that is different from the connection side is mirror-coated. A method for the manufacture of multiple components of this sort is also disclosed.

Optoelectronic component and method for the manufacture of a plurality of optoelectronic components

An arrangement includes an optoelectronic component with two contacts; at least one further component part; at least one contact arranged between the optoelectronic component and the further component part; and at least one web arranged between the optoelectronic component and the further component part.

Arrangement comprising an optoelectronic component

A luminous means includes a first group of semiconductor chips and a second group of semiconductor chips, each group includes at least one semiconductor chip, wherein the first and second groups of semiconductor chips are arranged laterally alongside one another at least in part with respect to a main emission direction of the luminous means, and a third group of semiconductor chips which includes at least one semiconductor chip and is disposed downstream of the first and the second group with respect to the main emission direction, wherein each group of semiconductor chips emits electromagnetic radiation in wavelength ranges that differ from one another in pairs, radiation emitted by the third group of semiconductor chips has the shortest-wave wavelength range, radiation emitted by the first and second group of semiconductor chips at least partly passes into the at least one semiconductor chip of the third group, and mixed radiation is emitted by an emission area of the luminous means.

Luminous means

A method is disclosed in which a base body is prepared that comprises a layer sequence intended for the LED chip and suitable for emitting electromagnetic radiation. A cap layer is applied to at least one main surface of the base body. A cavity is introduced into the cap layer and is completely or partially filled with a luminescence conversion material. The luminescence conversion material comprises at least one phosphor. A method is also disclosed in which the cap layer comprises photostructurable material and at least one phosphor, such that it is able to function as a luminescence conversion material and can be photostructured directly. LED chips that are producible by means of the method are also described.

Growing community of inventors

Nittendorf/Etterzhausen, Germany

Dieter Eissler