Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Other

Dieter Bollmann

Christof Landesberger

Christoph Kutter

Karl Haberger

Juergen Kruckow

Michael Feil

Karl Neumeier

Reinhold Buchner

Robert Wieland

Christof Strohhöfer

Leonhard Hoefter

Stefan Seitz

Carrier wafers are used to hold thin and ultra-thin substrates such as semiconductor components, for example. The carrier wafer of the invention has a plurality of electrodes insulated on all sides (floating electrodes). This plurality of floating electrodes, but at least 50 floating electrodes, are located next to one another with reference to the plane of the first surface of the carrier wafer. Each of these floating electrodes can be charged, for example by means of Fowler-Nordheim tunnels or by the injection of hot charge carriers, in particular of hot electrons or hot holes. Also provided are a method for holding a flexible substrate by means of a carrier wafer of this type and a method for the manufacture of a carrier wafer of this type.

Carrier wafer, method for holding a flexible substrate and method for the manufacture of a carrier wafer

The present invention relates to a bipolar carrier wafer and a mobile, bipolar electrostatic wafer arrangement. Carrier wafers and wafer arrangements of this type can be used in particular in the field of handling technology of semiconductor wafers. The carrier wafer according to the invention serves for mounting a disc-shaped semiconductor component. It has a first surface () as front-side and a second surface () which is situated opposite the first surface () as rear-side. The carrier wafer is configured such that it has a carrier layer (), an electrically insulating cover layer () which surrounds the carrier layer and an electrically conductive layer (), the latter being disposed on the electrically insulating cover layer and being structured in at least two regions which are separated from each other electrically as electrodes. Electrical contacts are disposed on the rear-side () of the carrier wafer, these electrical contacts being connected to the two electrodes disposed on the front-side (). On the electrically conductive layer (), in addition an electrically insulating cover layer () is disposed which covers both the front-side () and the edge of the carrier wafer between the front-side () and the rear-side ().

Bipolar carrier wafer and mobile bipolar electrostatic wafer arrangement

In a method of producing a micro-electromechanical element a first intermediate layer, which is applied to a first main surface of a first semiconductor wafer, is structured in a first step so as to produce a recess. The first semiconductor wafer is connected via the first intermediate layer to a second semiconductor wafer in such a way that a hermetically sealed cavity is defined by the recess. When one of the wafers has been thinned from a surface facing away from said first intermediate layer so as to produce a diaphragm-like structure on top of the cavity, electronic components are produced in said thinned semiconductor wafer making use of standard semiconductor processes. At least one further intermediate layer between the two semiconductor wafers is provided, which, prior to the connection of the two semiconductor wafers, is structured in such a way that the structure formed in said at least one further intermediate layer and the recess in said first intermediate layer define the cavity. Finally at least one defined opening is produced so as to provide access to the hermetically sealed cavity.

Method of producing a micro-electromechanical element

In a method of producing a micromechanical structure for a micro-electromechanical element, a first intermediate layer, which is applied to a first main surface of a first semiconductor wafer, is structured in a first step so as to produce a recess. The first semiconductor wafer is then connected via the first intermediate layer to a second semiconductor wafer in such a way that a hermetically sealed cavity is defined by the recess. Finally, one of the wafers is thinned from a surface facing away from said first intermediate layer so as to produce a diaphragm-like structure on top of the cavity. At least one further intermediate layer is provided between the two semiconductor wavers which, prior to the connection of the two semiconductor wafers, is structured in such a way that the structure formed in said at least one further intermediate layer and the recess in said first intermediate layer define the cavity.

Method of producing a micromechanical structure for a micro-electromechanical element

The invention relates to a method of producing calibration structures in semiconductor substrates in the manufacture of components, specifically micro-mechanical systems with integrated semiconductor electronic systems. In the method a first layer ( ) is structured on a first substrate ( ) to produce first areas ( ) which are required for the function of the components. Moreover, second areas ( ) are produced in the first layer ( ), which represent the calibration structures. The second areas ( ) present a refractive index different from the refractive index of adjoining areas. Subsequently, the first substrate ( ) is joined with a second substrate ( ) such that the first layer ( ) will be enclosed between the two substrates. Then either the first or the second substrate is thinned down to a residual thickness. The substrate layer with this residual thickness constitutes, for instance, the membrane in a pressure sensor. The inventive method does not entail a weakening of the mechanical properties of supporting layers. The method may be integrated into the manufacturing process without additional process steps or complex and expensive etching techniques.

Method of producing calibration structures in semiconductor substrates

Process for the thin etching of substrates

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Munich, Germany

Dieter Bollmann