Alcatel N.v.

Alcatel Alsthom Compagnie Generale D'electricite

Dieter Baums

Michael Schilling

Klaus Wunstel

Wilfried Idler

Olaf Hildebrand

Gert Laube

Kaspar Dutting

Hans-Peter Mayer

Michael Trompf

Hans Jurgen Matt

Gebhard Thierer

Heinz Schweizer

Neural networks are used to classify objects automatically by means of Doppler-broadened radar echo signals. The classification device KK contains a neural network (NET, NET2) which has an input layer (IL) of input nodes (IN1, . . . , IN57) for features (M) of the Doppler-broadened radar echo signals, and an output layer (OL) of output nodes (ON1, ON2, ON3) for predetermined classes to which the objects can be allocated. The neural network (NET, NET2) is adapted to the external conditions prevailing at the time of the classification operation. The adaptation takes place either via accessible input nodes (ZN1, ZN2) into which control information (SI) can be entered, and which cause the neural network (NET) to adapt to one or to several external influence factors, or via a selection device (SEL) which, from the parameters (P1, . . . , P4) of several neural networks stored in a memory (MEM), which are trained with training data under respectively different conditions of external influence factors, selects the one most similar to the prevailing conditions.

Device and method for classifying objects in an environmentally adaptive

A circuit arrangement is presented for an optical modulator with an optical modulator diode (MD) driven in the blocking direction which, in addition to a shunt resistor (RN) wired in parallel with the modulator diode, contains a damping resistor (RD) wired ahead of the modulator diode, for attenuating unwanted reflections. The damping resistor is preferably wired ahead of the parallel circuit of modulator diode and shunt resistor, and forms part of the terminal resistance of the connecting line carrying the modulation signal (U.sub.m).

Optical modulator circuit

A semiconductor device is operated as an optical filter. The semiconductor device has a substrate and a monolithically integrated branched waveguide structure disposed above the substrate, portions of the waveguide structure being divided into a plurality of regions by troughs, one of the regions being a branching region. Light is radiated into the waveguide structure at an end face of one of the regions and currents that are smaller than respective laser threshold currents of the regions flow through the regions, including the branching region, perpendicular to a propagation direction of light through the waveguide.

Method of operating a semiconductor device as an optical filter and

A semiconductor laser is provided monolithically integrated on a substrate and has a cavity layer extending above a plane that is coplanar with a base surface of the substrate, is branched and includes a plurality of separately controllable regions. The laser is operated by changing charge carrier density in at least one of the regions so that it emits light at one of a first wavelength and a second wavelength in correspondence with the charge carrier density change.

Method of operating a semiconductor laser as a bistable opto-electronic

An interferometric semiconductor laser includes a cavity in the form of a Y and at east three individually actuatable active segments. A central segment couples together the individually actuatable active segments. The central segment is an active or passive segment that acts as a beam divider. The arrangement of the segments forms two resonator paths which contain at least one common active segment. At least one resonator path includes an active segment that does not belong to the other resonator path. In the absence of, or with the same actuation of the active segments, the optical path length of one resonator path differs from the optical path length of the other resonator path.

Tunable semiconductor laser

A semiconductor laser that is monolithically integrated on a substrate and whose cavity has a branched structure that is simply contiguous in a topological sense, and which includes a plurality of regions that enclose the cavity, is operated as a mode-locked semiconductor laser, with an alternating current flowing through at least one region in addition to a direct current. The frequency of the alternating current is related to the reciprocal of the round-trip time or an integral multiple of this reciprocal of light pulses generated by the alternating current in the semiconductor laser.

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Ludwigsburg, Germany

Dieter Baums