Applied Materials, Inc.

Dien-Yeh Wu

Mei Yin Chang

Ling Chen

Vincent W Ku

Hua Chung

Paul F Ma

Seshadri Ganguli

Yu Lei

Alan Hiroshi Ouye

Christophe Marcadal

Yi Xu

Xiaoxiong Yuan

Jallepally Ravi

Kazuya Daito

Faruk Gungor

Wei V Tang

Norman M Nakashima

Pingyan Lei

Schubert S Chu

Jenny Lin

Chien-Teh Kao

Takashi Kuratomi

Geraldine M Vasquez

Joseph Yudovsky

Yixiong Yang

Manjunatha P Koppa

Kavita Shah

Frederick C Wu

Anqing Cui

Hyman W H Lam

Srinivas Gandikota

Joel M Huston

Vikash Banthia

Jiang Lu

Daping Yao

Sandesh Yadamane

David Chu

Hyman Lam

Can Xu

Bo Wang

David P Thompson

John C Forster

Jeffrey W Anthis

Avgerinos V Gelatos

Xinliang Lu

Xinyu Fu

Joseph F AuBuchon

Yu Wen Chang

Umesh M Kelkar

Shih Chung Chen

Atif Noori

Wei Lei

Guodan Wei

Shirish A Pethe

Yufei Hu

Ilker Durukan

Jing Zhou

Steven H Kim

Mark S Johnson

Shreyas Patil Shanthaveeraswamy

Aixi Zhang

Chun-Teh Kao

Da He

Zhimin Qi

Xingyao Gao

Vinod Konda Purathe

Jennifer Y Sun

Anantha K Subramani

Muhammad M Rasheed

Rongjun Wang

Mehran Behdjat

Kai Wu

Siamak Salimian

Sundar Ramamurthy

Annamalai Lakshmanan

Lei Zhou

Tao Huang

Yao-Hung Yang

Sudhir R Gondhalekar

Aniruddha Pal

Olkan Cuvalci

Steven D Marcus

Guoqiang Jian

Irena H Wysok

Chi-Chou Lin

William Kuang

Guojun Liu

Feiyue Ma

Xiao Ming He

Puneet Bajaj

Pulkit Agarwal

Shiyu Yue

Boon Sen Chan

Eric Ruhland

David Santi

Jonathan Robert Bakke

Kyoung-Ho Bu

Bin V Cao

Saurabh M Chaudhari

Xianyuan Zhao

Process chamber shower head

Embodiments of methods and associated apparatus for filling a feature in a substrate are provided herein. In some embodiments, a method of depositing tungsten in features of a substrate includes: depositing a seed layer consisting essentially of tungsten in the features via a physical vapor deposition (PVD) process; and depositing a bulk layer consisting essentially of tungsten in the features via a chemical vapor deposition (CVD) process to fill the features such that the deposition of the bulk layer is selective to within the features as compared to a field region of the substrate, wherein the CVD process is performed by flowing hydrogen gas (H) at a first flow rate and a tungsten precursor at a second flow rate, and wherein the first flow rate is less than the second flow rate.

Self field-suppression CVD tungsten (W) fill on PVD W liner

Process chamber manifold

Process chamber lid assemblies and process chambers comprising same are described. The lid assembly has a housing with a gas dispersion channel in fluid communication with a lid plate. A contoured bottom surface of the lid plate defines a gap to a top surface of a gas distribution plate. A pumping channel is formed between an upper outer peripheral contour of the gas distribution plate and the lid plate.

Thermal process chamber lid with backside pumping

Methods for reducing resistivity of metal gapfill include depositing a conformal layer in an opening of a feature and on a field of a substrate with a first thickness of the conformal layer of approximately 10 microns or less, depositing a non-conformal metal layer directly on the conformal layer at a bottom of the opening and directly on the field using an anisotropic deposition process. A second thickness of the non-conformal metal layer on the field and on the bottom of the feature is approximately 30 microns or greater. And depositing a metal gapfill material in the opening of the feature and on the field where the metal gapfill material completely fills the opening without any voids.

Methods for forming metal gapfill with low resistivity

Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

Processing chamber with multiple plasma units

Embodiments of a lid heater for a deposition chamber are provided herein. In some embodiments, a lid heater for a deposition chamber includes a ceramic heater body having a first side opposite a second side, wherein the ceramic heater body includes a first plurality of gas channels extending from one or more first gas inlets on the first side, wherein each of the one or more first gas inlets extend to a plurality of first gas outlets on the second side; a heating element embedded in the ceramic heater body; and an RF electrode embedded in the ceramic heater body proximate the second side, wherein the first plurality of gas channels extend through the RF electrode.

Gas distribution ceramic heater for deposition chamber

Seal for an assembly in a vapor deposition chamber

Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.

Low-temperature plasma pre-clean for selective gap fill

Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A substrate comprising a surface structure with a metal bottom, dielectric sidewalls, and a field of dielectric is exposed to a dual plasma treatment in a processing chamber to remove chemical residual and/or impurities from the metal bottom, the dielectric sidewalls, and/or the field of the dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The dual plasma treatment comprises a direct plasma and a remote plasma.

Dual plasma pre-clean for selective gap fill

Methods and apparatus for depositing a coating on a semiconductor manufacturing apparatus component are provided herein. In some embodiments, a method of depositing a coating on a semiconductor manufacturing apparatus component includes: sequentially exposing a semiconductor manufacturing apparatus component including nickel or nickel alloy to an aluminum precursor and a reactant to form an aluminum containing layer on a surface of the semiconductor manufacturing apparatus component by a deposition process.

Apparatuses and methods of protecting nickel and nickel containing components with thin films

Apparatus for processing a substrate are provided herein. In some embodiments a showerhead assembly includes a gas distribution plate having a plurality of apertures; a holder having a wall, an radially inwardly extending flange extending from a lower portion of the wall and coupled to the gas distribution plate, and a radially outwardly extending flange extending from an upper portion of the wall, wherein the wall has a thickness between about 0.015 inches and about 0.2 inches; and a heating apparatus disposed above and spaced apart from the gas distribution plate, wherein the heating apparatus includes a heater configured to heat the gas distribution plate.

Substrate processing chamber having heated showerhead assembly

Embodiments of showerheads are provided herein. In some embodiments, a showerhead for use in a process chamber includes a gas distribution plate having an upper surface and a lower surface; a plurality of channels extending through the gas distribution plate substantially perpendicular to the lower surface; a plurality of first gas delivery holes extending from the upper surface to the lower surface between adjacent channels of the plurality of channels to deliver a first process gas through the gas distribution plate; and a plurality of second gas delivery holes extending from the plurality of channels to the lower surface to deliver a second process gas therethrough without mixing with the first process gas.

High temperature dual chamber showerhead

Growing community of inventors

San Jose, CA, United States of America

Dien-Yeh Wu