Infineon Technologies Austria Ag

Siliconix Technology C. V. Ir

Diego Raffo

Luigi Merlin

Christian Locatelli

Andrea Irace

Giovanni Breglio

Paolo Spirito

Andrea Bricconi

Wolfgang Frank

Davide Respigo

Weidong Chu

Andrea Luigi Francesco Mariconti

A monolithic half-bridge gate driver includes a phase node terminal configured to be coupled to a phase node to which a high-side transistor and a low-side transistor of a half-bridge are coupled; a diode comprising an anode and a cathode, wherein the cathode is coupled to the phase node terminal; and a comparator comprising a first input terminal coupled to the anode of the diode for receiving a measurement value indicative of a phase voltage at the phase node terminal, a second input terminal coupled to a threshold source for receiving a threshold, and an output terminal configured to output a comparison result indicating whether the measurement value satisfies the threshold. The phase node terminal is configured to be connected to a high-side supply potential by the high-side transistor, and is configured to be connected to a low-side supply potential by the low-side transistor.

Protecting a power inverter by sensing a phase node voltage

A gate driver circuit for driving a power switch includes a gate driver having a first input for receiving an input signal and an output coupled to the power switch, the gate driver providing a primary gate current and an auxiliary gate current, and a differential voltage sensor having a first input for receiving the input signal, a second input coupled to a power supply voltage, a third input coupled to a terminal of the power switch, and an output coupled to a second input of the gate driver.

Adaptive multi-level gate driver

A semiconductor device in one embodiment includes a depletion junction, a peripheral region adjacent the depletion junction, and a buffer layer. The buffer layer is adapted to reduce localization of avalanche breakdown proximate the interface between the depletion junction and the peripheral region.

Semiconductor device with buffer layer

Growing community of inventors

Redondo Beach, CA, United States of America

Diego Raffo