Imec Vzw

Didit Yudistira

Joris Van Campenhout

Bernardette Kunert

Maria Ioanna Pantouvaki

Alexey Milenin

Younghyun Kim

A Silicon on Insulator (SOI) structure and a method for creating an undercut (UCUT) in an SOI structure, in particular, for a 300 mm SOI platform, is provided. In particular, the method includes fabricating one or more cavities in a silicon substrate underneath an insulator layer of the SOI structure by performing a first dry etch of the silicon substrate to create the one or more cavities, performing a first wet etch of the silicon substrate to expand the one or more cavities, performing a second dry etch of the silicon substrate to further expand the one or more cavities and to break silicon facets created by the first wet etch, and performing a second wet etch to further expand the one or more cavities.

Method for producing an undercut in a 300mm silicon-on-insulator platform

A monolithic integrated electro-optical phase modulator, a Mach-Zehnder modulator including one or more of the phase modulators, and method for fabricating the phase modulator by III-V-on-silicon semiconductor processing are provided. The phase modulator includes a silicon-based n-type substrate base layer, and a III-V n-type ridge waveguide for propagating light, wherein the ridge waveguide protrudes from and extends along the n-type substrate base layer. Further, the phase modulator includes one or more insulating layers provided on the ridge waveguide, wherein the one or more insulating layers have together a thickness of 1-100 nm, and a silicon-based p-type top cover layer provided on the one or more insulating layers at least above the ridge waveguide.

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Kessel-lo, Belgium

Didit Yudistira