Centre National De La Recherche Scientifique

Avanex Corporation

Didier Decoster

Franck Mallecot

Antonina Plais

Arnaud Leroy

Christine Chaumont

Joël Jacquet

Monique Constant

Joe Harari

Renaud Fauquembergue

A semiconductor electrooptic monolithic component comprising successively a first section capable of emitting light at a first wavelength and including a first active layer, a second section capable of absorbing light at the said first wavelength and including a second active layer, and a third section capable of detecting light at a second wavelength and including a third active layer. The component is characterized in that the second active layer is designed to ensure in the said second section an absorption higher than that which would be allowed by an active layer identical to the said first layer.

Multi section electrooptic monolithic component

This invention relates to a process for producing a photoelectric detector of the high-gain photoresistor type comprising on a substrate an active layer of doped gallium arsenide provided with two electrodes with ohmic contacts for connection to a user circuit, said process consisting in applying to the active layer a treatment producing a selective attack of the surface of said layer modifying its degree of compensation in gallium and in arsenic and the superficial charge states.

Process for producing a photoelectric detector of the high-sensitivity

Growing community of inventors

Leers, France

Didier Decoster