Abb Schweiz Ag

Abb Research Ltd.

Abb Technology Ag

Hitachi Energy Switzerland Ag

Audi Ag

Abb Power Grids Switzerland Ag

Abb Technology Oy

Hitachi Energy Ltd

Didier Cottet

Gunnar Asplund

Felix Greuter

Francesco Agostini

Felix Traub

Thomas Gradinger

Slavo Kicin

Daniel Kearney

Andreas Vögeli

Daniele Torresin

Dacfey Dzung

Andreas Apelsmeier

Mathieu Habert

Fabian Mohn

Samuel Hartmann

Lise Donzel

Stefan Linder

Wojciech Piasecki

Jürgen Schuderer

Juergen Schuderer

Tobias Wikstroem

Chunlei Liu

Franziska Brem

Bernhard Wunsch

Filip Grecki

Johann Asam

Anne Vallestad

Simon Douglas Round

Arne Schroeder

Thomas Stiasny

Torsten Nilsson

Andreas Vogeli

Lars Kalland

A power semiconductor module comprises abase plate (); a semiconductor chip () disposed on and in contact with a top surface of the base plate (), a preform () disposed on and in contact with a top surface of the semiconductor chip (); and a pressing element () in contact with and applying a pressure onto a top surface of the preform (). The preform () comprises a first electrically conductive layer () and a second electrically conductive layer (). The first electrically conductive layer () has at least one protrusion () protruding towards the top surface of the semiconductor chip () and defining a recess () in the first electrically conductive layer () of the preform (), wherein the recess () may annularly surround the protrusion (). The at least one protrusion () is made from the same material as the first electrically conducting layer () and integrally formed with it or the first electrically conducting layer () and the at least one protrusion () are made from different materials. At least a portion of the second electrically conductive layer () is positioned in the recess () and on the top surface of the semiconductor chip (). The material of the at least one protrusion () has a higher melting point than the material of the second electrically conductive layer (). The power semiconductor module is configured so that in an event of semiconductor chip failure with heat dissipation, the protrusion () of the first electrically conductive layer () penetrates through residual material () of the semiconductor chip () upon pressure applied by the pressing element () towards the base plate () so as to establish a contact between the protrusion () of the first electrically conductive layer () and the base plate () and form a short circuit bridging the defective semiconductor chip () in a short circuit failure mode. The bottom surface of the preform () may be formed by a bottom surface of the second electrically conductive layer () alone or by a bottom surface of the second electrically conductive layer () and a bottom surface of the protrusion ().

Hybrid short circuit failure mode preform for power semiconductor devices

A converter apparatus includes a string of electrically interconnected modules that includes a first group of modules comprising a first module and a second group of modules comprising a second module. A first screen is connected to a first defined electric potential and is located adjacent the first group of modules and a second screen is connected to a second defined electric potential and is located adjacent the second group of modules. During operation of the converter apparatus a resonance loop is created from the first module via the first and second screens and the second module back to the first module. A damping unit is located in the resonance loop and is set to dampen electromagnetic noise.

Converter arrangement

A power semiconductor module, including a housing; a power semiconductor chip within the housing; power terminals protruding from the housing and electrically interconnected with power electrodes of the semiconductor chip; and auxiliary terminals protruding from the housing and electrically interconnected with a gate electrode and one of the power electrodes; wherein three auxiliary terminals are arranged in a coaxial auxiliary terminal arrangement, which comprises an inner and two outer auxiliary terminals, which are arranged on opposing sides of the inner auxiliary terminal. The inner auxiliary terminal is electrically interconnected with the gate electrode or one of the power electrodes and the two outer auxiliary terminals are electrically connected with the other one of the gate electrode and the one of the power electrodes.

Power semiconductor module with low gate path inductance

A power electronics module comprises a first liquid cooler comprising a cooling channel for receiving a cooling liquid, wherein the first liquid cooler comprises a metal body providing a first terminal of the power electronics module; a second liquid cooler comprising a cooling channel for receiving a cooling liquid, wherein the second liquid cooler comprises a metal body providing a second terminal of the power electronics module; a plurality of semiconductor chips arranged between the first liquid cooler and the second liquid cooler, such that a first electrode of each semiconductor chip is bonded to the first liquid cooler, such that the first electrode is in electrical contact with the first liquid cooler, and an opposite second electrode of each semiconductor chip is in electrical contact with the second liquid cooler; and an insulating encapsulation, formed by molding the first liquid cooler, the second liquid cooler and the plurality of semiconductor chips into an insulation material, such that the first liquid cooler, the second liquid cooler and the plurality of semiconductor chips are at least partially embedded onto the insulation material.

Power electronics module with first and second coolers

A semiconductor module comprises a semiconductor chip comprising a semiconductor switch having a collector, emitter and gate, a collector terminal connected to the collector, gate terminal connected to the gate, an emitter terminal connected to the emitter via an emitter conductor path having an emitter inductance, an auxiliary emitter terminal connected to the emitter, a first conductor path connected to the emitter, and a second conductor path connected to the emitter having a different mutually inductive coupling with the emitter conductor path as the first conductor path. The first conductor path and the second conductor path are connectable to the auxiliary emitter terminal and/or the first conductor path is connected to the auxiliary emitter terminal and the second conductor path is connected to a second auxiliary emitter terminal. The semiconductor switch is an IGBT and each of the first conductor path and the second conductor path comprises bridging points for connecting the respective conductor path to the auxiliary emitter terminal.

Semiconductor module with two auxiliary emitter conductor paths

The present application is concerned with a system for transmitting and/or receiving the control and sensing signals between the control units and the power electronic components. One system according to the present application comprises: a transceiver adapted to modulate the communication signal on a communication signal frequency band, and a coupler connected to the power conductor and adapted to couple the modulated communication signal to the power conductor. The present application also concerns a method for transmitting and receiving the control and sensing signals.

System for transmitting and receiving a power line communication signal over the power bus of a power electronic converter

A power module providing a half bridge comprises at least one substrate and an inner metallization area, two intermediate metallization areas and two outer metallization areas, each of which extends in a longitudinal direction of the at least one substrate; wherein the two intermediate metallization areas are arranged besides the inner metallization area with respect to a cross direction of the at least one substrate and each outer metallization area is arranged beside one of the two intermediate metallization areas with respect to the cross direction; wherein the power module comprises two inner sets of semiconductor switches, each inner set of semiconductor switches bonded to an intermediate metallization area and electrically connected to the inner metallization area, such that the inner sets of semiconductor switches form a first arm of the half bridge; wherein the power module comprises two outer sets of semiconductor switches, each outer set of semiconductor switches bonded to an outer metallization area and electrically connected to an intermediate metallization area, such that the outer sets of semiconductor switches form a second arm of the half bridge.

Power module with low stray inductance

The present disclosure relates to a power semiconductor module comprising a printed circuit board (PCB), and to method of cooling such a power semiconductor module. The module comprises a power semiconductor device and an island of thermally conducting foam embedded into the printed circuit board. The power semiconductor device and the island of thermally conducting foam are positioned on top of each other, and the island is arranged to form a path for a flowing coolant cooling the power semiconductor device.

Power semiconductor module and method for cooling power semiconductor module

The present disclosure relates to the cooling of electric and/or electronic components, in particular to an electric and/or electronic system with a cabinet, which includes a cabinet housing including a first aperture for receiving a stream of cooling air. The cabinet housing includes a second aperture for releasing the cooling air thereafter in an operating state of the cabinet. At least two modules, which each include a guiding structure with an inlet and an outlet, are provided in the cabinet. The at least two modules are arranged in the cabinet housing such that a branch of the major portion of cooling air flowing through the first aperture of the cabinet housing is enabled to flow into each module via the inlet guided by the guiding structure through the dedicated module to the outlet and thereafter through the second aperture out of the cabinet housing.

Cabinet with modules having a thermosiphon cooler arrangement

A thermosiphon cooler arrangement is provided for the cooling of electric and/or electronic components, including a module of an electric and/or electronic system. The module includes a guiding structure and an inlet for receiving a stream of cooling air, and an outlet for releasing cooling air thereafter in an operating state of the module. The guiding structure is provided for guiding the cooling air entering through the inlet and leaving the module through the outlet in an operating state of the module. The module includes a thermosiphon cooler with an evaporator and a condenser for transferring a majority of a heat load to the cooling air in an operating state of the module. The evaporator is tilted with respect to the condenser wherein the condenser is arranged such that a major portion of the cooling air flows through the condenser.

Thermosiphon cooler arrangement in modules with electric and/or electronic components

A semiconductor power module includes at least two sub modules. The sub modules include at least one respective transistor having a collector, an emitter, and a gate. The module includes a connection arrangement having a collector terminal unit for connecting the collectors of the at least two sub modules collectively to external circuit components, at least two emitter terminal units for connecting the respective emitters of the at least two sub modules individually to external circuit components, and at least two gate terminal units for connecting the respective gates of the at least two sub modules individually to external circuit components.

Connection arrangement for semiconductor power modules

The present disclosure provides a semiconductor switching device including a substrate having deposited thereon a cathode, an anode and a gate of the semiconductor switching device, and a connection means for electrically connecting the cathode in the gate of the semiconductor switching device to an external circuit unit. The connection includes a cathode-gate connection unit having a coaxial structure including a gate conductor and a cathode conductor for electrically connecting the cathode and the gate of the semiconductor switching device to the external circuit unit.

Semiconductor switching device with gate connection

Growing community of inventors

Zurich, Switzerland

Didier Cottet