Robert Boschgmbh

Implandata Ophthalmic Products Gmbh

Endress + Hauser Conducta Gesellschaft Fur Mess-u. Regeltechnik Mgh + Co. Kg

Dick Scholten

Michael Stumber

Franz Laermer

Ando Feyh

Jens Baringhaus

Christian Maeurer

Daniel Krebs

Tjalf Pirk

Wolfgang Feiler

Klaus Heyers

Ralf Reichenbach

Julia Cassemeyer

Dirk Steinmueller

Stephan Schwaiger

Christian Tobias Banzhaf

Jan-Hendrik Alsmeier

Camiel Heffels

Peter Lindmueller

A vertical field effect transistor. The vertical field effect transistor includes: a drift area; a semiconductor fin on or above the drift area; a connection area on or above the semiconductor fin; and a gate electrode, which is formed adjacent to at least one side wall of the semiconductor fin, the semiconductor fin, in a first section, which is situated laterally adjacent to the gate electrode, having a lesser lateral extension than in a second section, which contacts the drift area, and/or than in a third section, which contacts the connection area.

Vertical field effect transistor and method for the formation thereof

A trench transistor. The transistor including: a semiconductor region, a trench structure formed in the semiconductor region; a gate insulation layer and an electrically conductive gate layer formed on the gate insulation layer in the trench structure, and a gate contact, which is electrically conductively connected to the gate layer in an edge area of the trench transistor. A thickness of the gate insulation layer in the edge area of the trench transistor is greater than in an active area of the trench transistor.

Trench transistor

A vertical field-effect transistor. The transistor includes: a drift region having a first conductivity type; a semiconductor fin on or over the drift region; and a source/drain electrode on or over the semiconductor fin, the semiconductor fin having an electrically conductive region that connects the source/drain electrode to the drift region in electrically conductive fashion, and having a limiting structure that is formed laterally next to the electrically conductive region and that extends from the source/drain electrode to the drift region, the limiting structure being set up to limit a conductive channel of the vertical field-effect transistor in the semiconductor fin to the area of the electrically conductive region.

Vertical field-effect transistor and method for forming same

The invention relates to an implant device comprising a sensor module which comprises one or more first fastening means, an implant module which comprises one or more second fastening means, and a connecting module, by means of which the sensor module is connected to the implant module via the one or the first fastening means and via the one or the second fastening means, and comprising a fold axis, along which the implant device can be folded up.

Implant device, sensor module, single-use injector and method for producing an implant device

A manufacturing method for a porous microneedle array includes: forming a plurality of porous microneedle arrays, each having at least one microneedle and a porous carrier zone lying beneath it on the face of a semiconductor substrate; forming an interlayer between a non-porous residual layer of the semiconductor substrate located on the back side of the semiconductor substrate and the carrier zone, which has greater porosity than the carrier zone; detaching the residual layer from the carrier zone by breaking up the interlayer; and separating the microneedle arrays into corresponding chips.

Manufacturing method for a porous microneedle array and corresponding porous microneedle array and corresponding substrate composite

A system having a medication reservoir for a medication dosing apparatus for administering a liquid medication, and having a medication supply container holding the liquid medication, a filling device being provided for the automatic filling of the medication reservoir with the medication coming from the medication supply container. Fluidic connections may be provided between individual components for transfer and filling of the liquid medication. This system for administering a medication has the advantage that reliable and simple filling of the medication may be performed.

Filling device having cooling and system for administering a liquid medication

An array for placement on the skin of a human or animal patient for the purpose of the transdermal application of pharmaceuticals, toxins or active agents, having microneedles that are situated on a carrier substrate, the microneedles having a preset breaking point in the area of the transition to the carrier substrate.

Microneedles to be placed in the skin for the transdermal application of pharmaceuticals

A method for manufacturing porous microstructures in a silicon semiconductor substrate, porous microstructures manufactured according to this method, and the use thereof.

Method for manufacturing porous microstructures, porous microstructures manufactured according to this method, and the use thereof

A method for producing porous microneedles () situated in an array on a silicon substrate includes: providing a silicon substrate, applying a first etching mask, patterning microneedles using a DRIE process ('deep reactive ion etching'), removing the first etching mask, at least partially porosifying the Si substrate, the porosification beginning on the front side of the Si substrate and a porous reservoir being formed.

Method for producing porous microneedles and their use

The invention relates to a device for the IR-spectrometric analysis of a solid, liquid or gaseous medium. The device includes a process probe, which has a reflection element. The device additionally includes a linear variable filter, at least one detector element, and a control/evaluation unit. At least one light source is also provided, the light of which is coupled into the reflection element via a collimating optics. At least one optical waveguide having a light input section and a light output section is provided. The light is guided via the light output section of the optical waveguide into a defined region of the linear variable filter. The detector element and the linear variable filter are arranged movably relative to one another over approximately the length of the linear variable filter. The control/evaluation unit determines the spectrum of the medium on the basis of the measured values delivered from the detector element.

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Stuttgart, Germany

Dick Scholten