Texas Instruments Corporation

Dibyajat Mishra

Anindya Poddar

Luu Thanh Nguyen

Ashok S Prabhu

Hau Thanh Nguyen

Makoto Yoshino

Tomoko Noguchi

Swaminathan Sankaran

Hassan Omar Ali

Venkatesh Srinivasan

Vijaylaxmi Gumaste Khanolkar

In a described example, an apparatus includes: a semiconductor device mounted to a device side surface of a package substrate, the package substrate having a board side surface opposite the device side surface; an antenna module mounted to the package substrate and coupled to the semiconductor device; and mold compound covering the semiconductor device and a portion of the package substrate.

Microelectronic device package with integral antenna module and semiconductor device

A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.

Bump bond structure for enhanced electromigration performance

Growing community of inventors

Fremont, CA, United States of America

Dibyajat Mishra