Fei Comapny

Carl Zeiss Microscopy Gmbh

Diane Stewart

Steven Berger

Christian R Musil

John Beaty

Joan Williams Casey, Legal Representative

J David Casey, Jr

Daniel A Rosenthal

Michel Epsztein

John Anthony Notte, Iv

W Ralph Knowles

Chuong Huynh

Sybren J Sijbrandij

Brian T Kimball

Bernhard Goetze

Disclosed is a charged particle beam system comprising a charged particle beam column having a charged particle source forming a charged particle beam, an objective lens and a first deflection system for changing a position of impingement of the charged particle beam in a sample plane. The system further comprises a sample chamber comprising a sample stage for holding a sample to be processed, and a controller configured to create and store a height map of a sample surface. The controller is further configured to dynamically adjust the objective lens of the charged particle beam in dependence on a position of impingement of the charged particle beam according to the height map.

Charged particle beam system and methods

A method and apparatus for determining statistical characteristics of nano-particles includes distributing the nano-particles over a surface and then determining properties of the nano-particles by automatic measurement of multiple particles or by a measurement that determines properties of multiple particles at one time, without manipulating individual nano-particles.

Methods and apparatus for statistical characterization of nano-particles

Transmissivity is restored to a gallium stained substrate by directing an electron beam to the substrate in the presence of an etching gas. For higher concentrations of implanted gallium, the transparency can be substantially restored without reducing the thickness of the substrate. For lower doses of implanted gallium, the transmission is restored to 100%, although the thickness of the substrate is reduced. The invention is suitable for use in the repair of photolithography masks.

Electron beam processing for mask repair

Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam. In another aspect, a charged particle beam can be programmed to etch a defect using three-dimensional information derived from two charged particle beams images of the defect from different angle.

Photolithography mask repair

A charged particle beam system uses an ion generator for charge neutralization. In some embodiments, the ion generator is configured to maintain an adequate gas pressure at the ion generator to generate ions, but a reduced pressure in the remainder of the vacuum chamber, so that another column can operate in the chamber either simultaneously or after an evacuation process that is much shorter than a process that would be required to evacuate the chamber from the full pressure required at the ion generator. The invention is particularly useful for repair of photolithography masks in a dual beam system.

Charged particle beam system

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Ipswich, MA, United States of America

Diane Stewart