Intel Corporation

Diane Lancaster

Matthew V Metz

Florian Gstrein

Rami Hourani

Szuya S Liao

Scott Bruce Clendenning

Jessica M Torres

Martin M Mitan

Kiran Chikkadi

Lukas M Baumgartel

Self-aligned gate endcap (SAGE) architectures without fin end gaps, and methods of fabricating self-aligned gate endcap (SAGE) architectures without fin end gaps, are described. In an example, an integrated circuit structure includes a semiconductor fin having a cut along a length of the semiconductor fin. A gate endcap isolation structure has a first portion parallel with the length of the semiconductor fin and is spaced apart from the semiconductor fin. The gate endcap isolation structure also has a second portion in a location of the cut of the semiconductor fin and in contact with the semiconductor fin.

Self-aligned gate endcap (SAGE) architectures without fin end gap

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Hillsboro, OR, United States of America

Diane Lancaster