Energy Conversion Devices, Inc.

Diane E Moore

Jaime M Reyes

Eugen Munteanu

The disclosed invention includes improved devices and materials for thermoelectric conversion, particularly for operation at temperatures of 300.degree. C. and below. Disordered p-type semiconductor elements incorporate compound adjuvants of silver and lead to achieve enhanced 'figure of merit' values and corresponding increased efficiencies of thermoelectric conversion. Similar results are obtained with disordered n-type elements by employing lowered selenium contents, preferably in combination with cuprous bromide. Improved conversion devices include powder pressed elements from one or both of these materials.

Thermoelectric materials and devices made therewith

An invention is disclosed which provides improved thermoelectric devices and methods of making and using the same. The device exhibits enhanced efficiency and operating life through the use of a bonding material comprising at least 75% busmuth together with an adherent metallic layer interposed between the boundary structure and correspondary thermoelectric semiconductor element.

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Clawson, MI, United States of America

Diane E Moore