International Business Machines Corporation

Hitachi Global Storage Technologies Netherlands B.v.

Hitachi Global Storage Technologies Amsterdam B.v.

Diana Perez

Cherngye Hwang

Son Van Nguyen

Andrew C Ting

Yongjian Sun

Jorge Goitia

John Wesley Williams

Pei Cheh Chen

Bigal Leung

Richard Hsiao

Martin Straub

Omar Eduardo Montero Camacho

Pei-C Chen

Gerd Dworschak

Eric Yongjian Sun

David Emery Haney

Robert James Huber

Raymond Bus-Kwoffie

A process for ion milling using photoresist as a mask is described. In a preferred embodiment the invention is used in the fabricating air-bearing features on sliders for use in magnetic storage devices. According to the invention the photoresist (liquid or dry) is applied, developed and removed as in the prior art which includes baking steps. The embodiment of the invention includes an additional baking step beyond whatever baking steps are used in the photolithography process. The additional baking step is preferably performed immediately prior to ion milling. The additional baking step according to the invention yields increased uniformity of the depth of the ion milling which is believed to result from reduction of volatile material such as water in the photoresist. When the invention is used as part of the manufacturing process for ion milling the air-bearing features on a slider, the features are more uniform which improves the overall quality and performance.

Method of forming uniform features using photoresist

Embodiments of the present invention are directed to a frame component of a pallet assembly. In one embodiment, the frame comprises a plurality of arms for retaining at least one carrier component. The frame further comprises at least one spring disposed upon one of the plurality of arms. The spring for applying pressure upon the carrier.

Direct cooling pallet assembly for temperature stability for deep ion mill etch process

Embodiments of the present invention are directed to a pallet assembly which facilitates direct cooling of the wafer carrier. In one embodiment, the pallet assembly comprises a frame which holds at least one carrier of a component. The pallet assembly further comprises a tray which is operable for being mechanically coupled with the frame. The tray comprises at least one discreet region which corresponds with the carrier when the tray is coupled with the frame. In embodiments of the present invention, the discreet region comprises at least one hole extending through the tray for permitting a coolant medium to dissipate heat from the carrier.

Direct cooling pallet tray for temperature stability for deep ion mill etch process

A method and apparatus for achieving etch rate uniformity in a reactive ion etcher. The reactive ion etcher generates a plasma within a vacuum chamber for etching a substrate disposed at a cathode of a reactor can within the chamber wherein the plasma emanates from a top plate of the reactor can, and is influenced by localized magnetic fields for locally controlling etch rates across the cathode to produce a uniform etch rate distribution across the cathode as a result of the localized magnetic field. The magnet array may be disposed between the top plate and the vacuum chamber for providing the localized magnetic fields. The magnet array includes a plurality of individual magnets and a grid plate for holding the individual magnets in position.

Method and apparatus for achieving etch rate uniformity in a reactive

A can for use in an etching system including a continuous conductive wall with a first opening to be placed adjacent the reactor upper electrode and a second opening to be placed adjacent the reactor lower electrode. Preferably, the conductive wall is a dual wall further including an inner wall and an outer wall, the inner and outer wall separated by one or more openings configured normal to the height of the continuous wall, the openings allowing for the flow of coolant through the wall.

Apparatus for achieving etch rate uniformity

A method of patterning a ceramic slider by plasma etching is disclosed. The ceramic slider contains alumina and titanium carbide. The method includes the steps of forming an etch pattern by depositing and developing a photoresist on the ceramic slider, and reactive ion etching a first surface on the ceramic slider using an etchant gas. The etchant gas generally includes argon, and a fluorine containing gas. The power source density, during etching ranges from about 0.5 W/(cm.sup.2) to 8 W/(cm.sup.2). Another aspect of the invention is a ceramic slider resulting from the method of the invention having a smoothness ranging from about 20 to 300 .ANG. as measured by atomic force microscopy.

Method of etching ceramics of alumina/TiC with high density plasma

The invention is a method of patterning the air bearing surface of a ceramic slider preferably including alumina and titanium carbide. The method includes the steps of forming an etch pattern by depositing and developing a photoresist on the ceramic slider, and reactive ion etching the slider air bearing surface using an etchant gas of argon, sulfur hexafluoride, and methyltrifluoride flowing at a rate which provides a smooth patterned surface on the slider air bearing surface.

Reactive ion etching of alumina/TiC substrates

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San Jose, CA, United States of America

Diana Perez