Seagate Technology Incorporated

Diana M Simplair

Steven A Mastain

Wallace A Peck

Kurt A Rothstein

A method for forming a top magnetic pole of an inductive magnetic head being begins with the step of forming a photolithographic material over a layer of insulating material at a hill region and gap region of the inductive magnetic head formed on a wafer and over a waste region of the wafer. Second, a mask is patterned on the photolithographic material defining a paddle region over the hill region, a feeder region over the waste region, and a trench region between the feeder region and the paddle region. The trench region extends over the gap region. Third solvent is admitted into the feeder region to flow in a laminar flow through the trench region to the paddle region to form the mask and expose a surface of the layer of insulating material in the paddle and trench regions of the mask.

Method for making narrow top poles for inductive magnetic heads

A mask forms a top magnetic pole piece of an inductive magnetic head having a layer of insulating material over a hill region and a gap region on a wafer. The mask comprises a layer of photolithographic material on the insulating material and a waste region of the wafer and includes a first aperture exposing the insulating material to define a paddle region of the pole piece over the hill region and a trench over the gap region. A second aperture is connected to the first aperture to define a feeder region over the waste region that funnels solvent to and through the trench and establishes laminar flow of solvent through the trench. Solvent is admitted into the feeder region for laminar flow through the trench region to form the mask and expose a surface of the layer of insulating material in the paddle and trench regions of the mask. The top pole piece defines a gap at an air bearing surface of the head having an average gap width not greater than 1.0 microns with a standard deviation of the average gap widths no more than 0.07 for heads formed on a single wafer and no more than 0.12 for heads formed on different wafers.

Growing community of inventors

Savage, MN, United States of America

Diana M Simplair