Ii-vi Delaware, Inc.

University of South Florida

Di Lan

Wen-Qing Xu

Giovanni Barbarossa

Christopher Stephen Koeppen

Elgin E Eissler

Jing Wang

Chao Liu

Weiqi Li

Xu Han

Shailesh Patkar

Xiaoming Li

Stephen P Rummel

A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. The piezoelectric layer is a single crystal of LiNbOcut at an angle of 130°±30°. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.

Electrode-defined unsuspended acoustic resonator

A wafer has a layer containing silicon, a layer of polycrystalline diamond deposited on the silicon-containing layer, and a bow-compensation layer on the other side of the silicon-containing layer for reducing wafer-bow. A method of making a bonded structure includes an activation process for creating dangling bonds on the surface of one substrate, followed by contact-bonding the surface to a second substrate at low temperature. A bonded structure may include two substrates contact bonded to each other, one substrate including a layer containing silicon, a layer of polycrystalline diamond, a bow-compensation layer for reducing wafer-bow of the first substrate, and the other substrate including gallium nitride, silicon carbide, lithium niobate, lithium tantalate, gallium arsenide, indium phosphide, or another suitable material other than diamond.

Bonded substrate including polycrystalline diamond film

A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.

Electrode defined resonator

An acoustic resonator includes a piezoelectric stack including a piezoelectric layer having a top surface and a bottom surface, a top electrode layer disposed above the top surface, and a bottom electrode layer disposed below the bottom surface. A number of acoustic wave reflectors are disposed on a side of the bottom electrode layer opposite the piezoelectric layer. Each acoustic wave reflector includes a high acoustic impedance layer and may include a low acoustic impedance layer. The acoustic resonator may include a tether that extends laterally to a stacking direction of the layers of the piezoelectric stack. A supporting structure may be coupled to the tether opposite the acoustic resonator for anchoring the acoustic resonator. A mirror, one or more phononic crystals, or both may be positioned on proximate the tether opposite the acoustic resonator to avoid resonant waves from exiting the acoustic resonator in use.

Acoustic resonator

An aluminum alloy wire, more specifically an aluminum-scandium wire, is adapted for an additive processing operation. A spool of material, containing an aluminum alloy wire, and a method of performing an additive processing operation, using an aluminum alloy wire, are also disclosed.

Aluminum-scandium wire for additive processing operation

A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. The piezoelectric layer is a single crystal of LiNbOcut at an angle of 130&#xb0;&#xb1;30&#xb0;. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.

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Tampa, FL, United States of America

Di Lan