Beihang University

Langfang Zhichi Power Technology Ltd.

Di An

Xiao Lin Zhang

Wenbin Wang

Xiaoda Cao

Zhi Tao

Weidong Fang

Kaiyun Zhu

Haiwang Li

Tiantong Xu

Yanxin Zhai

Yang Feng

Wensong Xiao

Kaibo Lei

Zhiyang Wang

Haonan Lu

Murun Li

Hengyi Wang

Chunhui Yang

Provided are a pressure difference sensor, and a manufacturing method and an application thereof. A manner of bonding three layers of wafers is adopted, and the sensor includes an upper structure, an intermediate structure and a lower structure. Each of the upper structure and the intermediate structure is manufactured by a silicon-on-insulator (SOI) wafer, the lower structure is manufactured by patterned doped intrinsic silicon; and a lead pad of each of the upper electrode, and the intermediate electrode and the lower electrode is located on a corresponding one of three-stepped steps at a side of the pressure difference sensor. Annular through holes are formed around the upper electrode and the lower electrode. A constant capacitance of a capacitance signal outputted by an upper capacitor of the sensor by extending an electric field line path of the constant capacitor part.

Capacitive pressure difference sensor with improved bonding and manufacturing method

Growing community of inventors

Beijing, China

Di An