Xilinx, Inc.

Dhruv Choksey

Terence J Magee

Sathappan Ravi

In an example, a memory control device includes an output circuit, an output delay unit, and a write-levelization controller. The output circuit is coupled to provide an output signal comprising a data signal or data strobe signal for a synchronous dynamic random access memory (SDRAM) system having a plurality of ranks. The output delay unit is coupled to apply an output delay to a bitstream to be transmitted to generate the output signal. The output delay includes an aggregate of a de-skew delay and a write-levelization delay. The write-levelization delay controller is coupled to adjust the write-levelization delay for each write transaction to the SDRAM system of a plurality of write transactions based on a selected rank of the plurality of ranks. The de-skew delay is the same across the plurality of ranks for each of the plurality of write transactions.

Dynamic selection of output delay in a memory control device

A method, non-transitory computer readable medium and apparatus for synchronizing a clock signal data path, a write strobe signal data path and a write data signal data path are disclosed. The method determines an amount of phase shift between the clock signal data path and the write strobe signal data path and between the clock signal data path and the write data signal data path, gates a clock signal to generate strobe clock signals that are phase shifted by at least one phase shift, applies a fine phase shift to the strobe clock signals where the strobe clock signals have an overall phase shift that is approximately equal to the amount of phase shift, and synchronizes a launch of the clock signal data path, the write strobe signal data path, and the write data signal data path using the strobe clock signals with the overall phase shift.

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Dhruv Choksey