Micron Technology Incorporated

Dhruv Chauhan

Rakeshkumar Dayabhai Vaghasiya

Anil Sindhi

Jameer Mulani

Mani Raghavendra Aravapalli

Nicola Colella

Anilkumar Rameshbhai Sindhi

Techniques for memory operations are described. Indications of temperature levels at a memory device may be received, where each of the indications may be associated with a respective time point. Based on an indicated temperature level satisfying a first threshold, a derivative of a temperature of the memory device may be calculated using the indicated temperature levels. Based on calculating the derivative, a determination as to whether the derivative satisfies a second threshold may be determined. If the derivative satisfies the second threshold, operations for accessing the memory device may be modified. A second derivative of the temperature of the memory device may similarly be calculated and compared against a third threshold based on the indicated temperature level satisfying the first threshold. If the second derivative satisfies the third threshold, operations for accessing the memory device may be modified by a different amount.

Modifying access operations based on temperature projections

Methods, systems, and devices for zone write operation techniques are described. A memory system may support zone write operations directly to a multiple-level cell cursor of the memory system. For example, the memory system may close a first zone associated with storing a first type of information from being written with additional information. Based on closing the first zone, the memory system may determine a rate at which the first type of information is written to the memory system. The memory system may receive a command to write second information of the first type to a second zone of the memory system. To write the second information to the second zone, the memory system may write the second information to a cursor configured to store information written to the second zone, and the cursor may be associated with multiple-level memory cells based on the first rate.

Zone write operation techniques

Methods, systems, and devices for data relocation scheme selection for a memory system are described. A system may select, based on a fragmentation characteristic of data associated with a block of addresses, whether to perform a relocation associated with relocating invalid data, or to perform a relocation associated with refraining from relocating invalid data. A relocation associated with relocating invalid data may be selected for relatively more-fragmented data, which may avoid a relatively higher latency or processing load associated with evaluating validity or updating logical-to-physical mapping at a more-granular level. A relocation associated with refraining from relocating invalid data may be selected for relatively less-fragmented data, which may support increasing available space by relocating data to a physical block with available portions that may be written to, taking advantage of a relatively lower latency or processing load associated with evaluating validity or updating logical-to-physical mapping at a less-granular level.

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Hyderabad Telangana, India

Dhruv Chauhan