Artisan Components, Inc.

Tela Innovations, Inc.

Arm Limited

Arm Physical Ip, Inc.

Dhrumil Gandhi

Scott T Becker

Jonathan R Quandt

Mark Templeton

Daniel F LaBouve

Michael C Smayling

Carole Lambert

Jim Mali

Daryl Fox

Lyndon Charles Lim

David Walter Flynn

Robert Campbell Aitken

John Philip Biggs

David William Howard

A semiconductor chip is defined to include a logic block area having a first chip level in which layout features are placed according to a first virtual grate, and a second chip level in which layout features are placed according to a second virtual grate. A rational spatial relationship exists between the first and second virtual grates. A number of cells are placed within the logic block area. Each of the number of cells is defined according to an appropriate one of a number of cell phases. The appropriate one of the number of cell phases causes layout features in the first and second chip levels of a given placed cell to be aligned with the first and second virtual grates as positioned within the given placed cell.

Methods for cell phasing and placement in dynamic array architecture and implementation of the same

A semiconductor device includes a plurality of cells. Each of the cells has a respective outer cell boundary defined to circumscribe the cell in an orthogonal manner. Also, each of the cells includes circuitry for performing one or more logic functions. This circuitry includes a plurality of conductive features defined in one or more levels of the cell. One or more of the conductive features in at least one level of a given cell is an encroaching feature positioned to encroach by an encroachment distance into an exclusion zone. The exclusion zone occupies an area within the cell defined by an exclusion distance extending perpendicularly inward into the given cell from a first segment of the outer cell boundary. The exclusion distance is based on a design rule distance representing a minimum separation distance required between conductive features in adjacently placed cells on the semiconductor device.

Methods for cell boundary encroachment and semiconductor devices implementing the same

A semiconductor device is disclosed to include a plurality of cells. Each of the cells has a respective outer cell boundary defined to circumscribe the cell in an orthogonal manner. Also, each of the cells includes circuitry for performing one or more logic functions. This circuitry includes a plurality of conductive features defined in one or more levels of the cell. One or more of the conductive features in at least one level of a given cell is an encroaching feature positioned to encroach by an encroachment distance into an exclusion zone. The exclusion zone occupies an area within the cell defined by an exclusion distance extending perpendicularly inward into the given cell from a first segment of the outer cell boundary. The exclusion distance is based on a design rule distance representing a minimum separation distance required between conductive features in adjacently placed cells on the semiconductor device.

Methods for cell boundary encroachment and layouts implementing the same

A first transistor has source and drain regions within a first diffusion fin. The first diffusion fin projects from a surface of a substrate. The first diffusion fin extends lengthwise in a first direction from a first end to a second end of the first diffusion fin. A second transistor has source and drain regions within a second diffusion fin. The second diffusion fin projects from the surface of the substrate. The second diffusion fin extends lengthwise in the first direction from a first end to a second end of the second diffusion fin. The second diffusion fin is positioned next to and spaced apart from the first diffusion fin. Either the first end or the second end of the second diffusion fin is positioned in the first direction between the first end and the second end of the first diffusion fin.

Circuits with linear finfet structures

A first gate level feature forms gate electrodes of a first finfet transistor of a first transistor type and a first finfet transistor of a second transistor type. A second gate level feature forms a gate electrode of a second finfet transistor of the first transistor type. A third gate level feature forms a gate electrode of a second finfet transistor of the second transistor type. The gate electrodes of the second finfet transistors of the first and second transistor types are electrically connected to each other. The gate electrodes of the second finfet transistors of the first and second transistor types are positioned on opposite sides of a gate electrode track along which the gate electrodes of the first finfet transistors of the first and second transistor types are positioned.

Finfet transistor circuit

Methods for cell boundary encroachment and layouts implementing the Same

A power controlling integrated circuit cell is provided within an integrated circuit power grid to selectively couple an unswitched power supply input to a switched power supply output. The power controlling integrated circuit cell also includes a power control signal input and a power control signal output for supporting the distribution through the integrated circuit of the power control signal. The power controlling integrated circuit cell has a power switching circuit responsive to a power control input signal received at the power control signal input to selectively connect the switched power supply output to the unswitched power supply input, and a power control signal buffer circuit responsive to the switched power supply output to drive a power control output signal from the power control signal output.

Power controlling integrated circuit cell

In an environment wherein a microprocessor can operate at several different voltage levels depending upon the instantaneous throughput of the microprocessor, a memory and memory adjustment circuit that permits operating the memory at a plurality of voltages in response to the microprocessor is disclosed. The memory and memory adjustment circuit sense the instantaneous operating voltage of the microprocessor and adjust the operating voltage of the memory in response thereto. The memory adjustment circuit more particularly increases or decreases the memory's bitline sense interval in response respectively to a decrease or increase in the memory's operating voltage.

Dynamically adaptable memory

An embedded memory device having improved BISR capabilities is provided. The embedded memory device includes an internal clock signal for use in accessing a memory array having access to redundant memory cells during normal operation, and a stress clock signal, wherein each pulse of the stress clock signal is of a shorter duration than each pulse of the internal clock signal. Further included are a built-in self-test circuit that performs a built-in self-test using the stress clock signal, and a register that stores defective memory addresses detected by the built-in self-test circuit. Redundant control logic is also included that redirects memory access operations to the defective memory addresses to redundant memory cells.

System and method for assured built in self repair of memories

A column redundancy circuitry and a method for implementing the same are provided. One exemplary method provides routing for an access request addressed to a defective cell. The method includes providing a redundant column within a memory circuit, the redundant column in communication with a sense amplifier. Next, a defective cell of a memory circuit is located and the address is programmed. An access request is then processed, the access request containing the address of the defective cell Finally, the access request is routed to the redundant column through enable circuitry. Some notable advantages include the conservation of surface area of the memory circuit induced by locating the redundant column within the memory circuit. The externalization of the fuse box, Built In Self Repair region and the logic circuitry from the memory core also provide increased flexibility.

Memory column redundancy circuitry and method for implementing the same

A method and apparatus for improving the manufacturability of Integrated Circuits (ICs) formed on semiconductor dies is described. A plurality of different designs for some or all of the standard cells are made available to the circuit designer. Each different design may address a different problem associated with different manufacturing processes or a different design related yield limiter. Each of the design variants is characterized indicating its relative ease of manufacture, or it's yield sensitivity to certain IC design factors. The designer, typically with assistance from computer aided tools, can then select the standard cell variant for each of the cell used in the IC design that best addresses his or her design constraints. In other embodiments, variant versions of I/O cells and memory cells could also be created and made available to the designer in a similar fashion.

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Cupertino, CA, United States of America

Dhrumil Gandhi